SiO2/Gd2O3/GaN metal oxide semiconductor field effect transistors

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Bibliographic Details
Published in:Journal of the Electrochemical Society 2001-06, Vol.148 (6), p.G303-G306
Main Authors: JOHNSON, J. W, GILA, B. P, REN, F, LUO, B, LEE, K. P, ABERNATHY, C. R, PEARION, S. J, CHYI, J. I, NEE, T. E, LEE, C. M, CHUO, C. C
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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ISSN:0013-4651
1945-7111
DOI:10.1149/1.1368110