The cooling semiconductor photographic system for visualization of the infrared radiation

The possibility of increasing spectral sensitivity of an ionization-type semiconductor photographic system for a given photosensitivity of an Si: Zn semiconductor detector has been studied. The cooling photographic system is designed to extend the sensitivity of the photographic system towards longe...

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Bibliographic Details
Published in:The imaging science journal 1999-01, Vol.47 (2), p.81-85
Main Authors: Salamov, B.G., Lebedeva, N.N., Colakoglu, K.
Format: Article
Language:English
Subjects:
Exact sciences and technology
Infrared radiation
Instruments, apparatus, components and techniques common to several branches of physics and astronomy
Photodetcctor
Photography, photographic instruments and techniques
xerography
Physics
Semiconductor photographic system
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Summary:The possibility of increasing spectral sensitivity of an ionization-type semiconductor photographic system for a given photosensitivity of an Si: Zn semiconductor detector has been studied. The cooling photographic system is designed to extend the sensitivity of the photographic system towards longer infrared (IR) wavelengths. The IR radiation excites the photosensitive semiconductor detector of the device, thus controlling the current density and the visible light emission from the gas discharge gap. The photodetcctor was irradiated on the back side with infrared radiation in a particular wavelength range which was used to control the photoconductivity of the detector. The size of the discharge gap and the residual gas pressure (60 Ton) are chosen to ensure a sufficiently bright light. The current voltage characteristics of the discharge cell with a semiconducting photodetcctor are obtained experimentally.
ISSN:1368-2199
1743-131X
DOI:10.1080/13682199.1999.11736458