Growth of AlN on etched 6H-SiC(0001) substrates via MOCVD

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Bibliographic Details
Published in:Physica status solidi. A. Applied research 2001-11, Vol.188 (2), p.783-787
Main Authors: HAGEMAN, W, XIE, Z, EDGAR, J, ZHUANG, D, JAGGANATHAN, S, BARGHOUT, K, CHAUDHURI, J, RYS, A, SCHMITT, J
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Defects and impurities: doping, implantation, distribution, concentration, etc
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Surface cleaning, etching, patterning
Surface treatments
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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ISSN:0031-8965
1521-396X
DOI:10.1002/1521-396X(200112)188:2<783::AID-PSSA783>3.0.CO;2-W