Influence of features of QW InGaAs/(Al)GaAs heterostructures grown by MOCVD on the emission spectrum of single-mode laser diodes

Laser heterostructures with an active layer consisted of two strained InGaAs quantum wells are fabricated by the MOCVD epitaxy method. Single-mode laser diodes with a 3 - 4-{mu}m wide stripe contact are made of the heterostructures and their spectral characteristics are studied. It is found that the...

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Bibliographic Details
Published in:Quantum electronics (Woodbury, N.Y.) N.Y.), 2002-03, Vol.32 (3), p.216-218
Main Authors: Bulaev, P V, Govorkov, O I, Zalevskii, I D, Krigel, V G, Marmalyuk, Aleksandr A, Nikitin, D B, Padalitsa, A A, Petrovskii, A V
Format: Article
Language:English
Subjects:
ARSENIC COMPOUNDS
ARSENIDES
ASYMMETRY
AUGER ELECTRON SPECTROSCOPY
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH METHODS
DEPOSITION
DISPERSIONS
ELECTRON SPECTROSCOPY
EMISSION SPECTRA
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HOMOGENEOUS MIXTURES
INDIUM ARSENIDES
INDIUM COMPOUNDS
LASERS
LAYERS
LINE BROADENING
MIXTURES
NANOSTRUCTURES
PNICTIDES
POWER DISTRIBUTION
PUMPING
QUANTUM WELLS
SOLID SOLUTIONS
SOLUTIONS
SPECTRA
SPECTROSCOPY
SURFACE COATING
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Description
Summary:Laser heterostructures with an active layer consisted of two strained InGaAs quantum wells are fabricated by the MOCVD epitaxy method. Single-mode laser diodes with a 3 - 4-{mu}m wide stripe contact are made of the heterostructures and their spectral characteristics are studied. It is found that the spectrum of the diodes consists of two groups of longitudinal modes, which cause the spectral broadening. The power distribution between these groups of modes depends on time, the pump current and the temperature of the active region. It is assumed that such a behavior of the diode spectra is explained by the asymmetry of the composition of the diode active region, which arises due to the segregation of In because of the complicated mechanism of its penetrating in the solid solution during the epitaxial growth. This assumption was confirmed by the study of the active region using a modified Auger spectroscopy method.
ISSN:1063-7818
1468-4799
DOI:10.1070/QE2002v032n03ABEH002164