Preparation and Aging Behavior of Chemical-Solution-Deposited (Pb(Mg1/3Nb2/3)O3)1-x-(PbTiO3)x Thin Films without Seeding Layers

The aging behavior of the solid‐solution series (Pb(Mg1/3Nb2/3)O3)1−x–(PbTiO3)x (PMN1−x−PTx) prepared by chemical‐solution deposition without seeding layers was investigated. A strong influence of the rapid thermal annealing step on the film density was determined. The best nucleation and density of...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2002-07, Vol.85 (7), p.1867-1869
Main Authors: HOFFMANN, Marcus, HOFER, Christiane, SCHNELLER, Theodor, BÖTTGER, Ulrich, WASER, Rainer
Format: Article
Language:English
Subjects:
aging
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
deposition
Electrical properties of specific thin films
electroceramics
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Liquid phase epitaxy
deposition from liquid phases (melts, solutions, and surface layers on liquids)
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Other inorganic semiconductors
Physics
solid solutions
Structure and morphology
thickness
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
thin films
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Summary:The aging behavior of the solid‐solution series (Pb(Mg1/3Nb2/3)O3)1−x–(PbTiO3)x (PMN1−x−PTx) prepared by chemical‐solution deposition without seeding layers was investigated. A strong influence of the rapid thermal annealing step on the film density was determined. The best nucleation and density of the thin films occurred when each deposited layer was separately pyrolyzed and crystallized. The thin‐film microstructure was investigated using scanning electron microscopy. Conventional capacitance‐voltage and hysteresis measurements were performed. For the first time, investigations on the fatigue performance and the leakage current for alternating‐current and direct‐current voltage were executed, which are important for the reliability in device applications.
ISSN:0002-7820
1551-2916
DOI:10.1111/j.1151-2916.2002.tb00366.x