Proton and electron radiation data and analysis of GaInP2/GaAs/Ge solar cells

We present electron and proton radiation data for our GaInP2/GaAs/Ge triple‐junction solar cell. An analysis of the data is also done with both the relative damage coefficients (RDC) method developed at NASA‐JPL, as well as the displacement damage dose (D3) method developed by the Naval Research Lab...

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Bibliographic Details
Published in:Progress in photovoltaics 2002-09, Vol.10 (6), p.383-390
Main Authors: Sharps, P. R., Aiken, D. J., Stan, M. A., Thang, C. H., Fatemi, Navid
Format: Article
Language:English
Subjects:
Applied sciences
Energy
Exact sciences and technology
Natural energy
Photovoltaic conversion
Solar cells. Photoelectrochemical cells
Solar energy
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Summary:We present electron and proton radiation data for our GaInP2/GaAs/Ge triple‐junction solar cell. An analysis of the data is also done with both the relative damage coefficients (RDC) method developed at NASA‐JPL, as well as the displacement damage dose (D3) method developed by the Naval Research Laboratory. We also discuss radiation tolerance of cells in the light of our development of an advanced triple‐junction cell. Copyright © 2002 John Wiley & Sons, Ltd.
ISSN:1062-7995
1099-159X
DOI:10.1002/pip.444