Hot carrier effects in Si-SiGe HBTs

Life tests were performed at room temperature on Si-SiGe HBTs by reverse biasing the base-emitter junction under open collector conditions. The effects on the DC, the low-frequency noise, and the microwave characteristics were investigated both by the analysis of experimental data and by simulations...

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Bibliographic Details
Published in:IEEE transactions on device and materials reliability 2001-06, Vol.1 (2), p.86-94
Main Authors: Borgarino, M., Kuchenbecker, J., Tartarin, J.-G., Bary, L., Kovacic, T., Plana, R., Fantini, F., Graffeuil, J.
Format: Magazinearticle
Language:English
Subjects:
Accumulators
Analytical models
Applied sciences
Collectors
Computer simulation
Devices
Direct current
Electronics
Emittance
Exact sciences and technology
Heterojunction bipolar transistors
Hot carrier effects
Low-frequency noise
Low-noise amplifiers
Mathematical analysis
Microwave devices
Microwaves
Performance evaluation
Probes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Stress
Testing
Testing, measurement, noise and reliability
Transistors
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Summary:Life tests were performed at room temperature on Si-SiGe HBTs by reverse biasing the base-emitter junction under open collector conditions. The effects on the DC, the low-frequency noise, and the microwave characteristics were investigated both by the analysis of experimental data and by simulations and analytical models. The stress-induced surface damage close to the emitter perimeter was identified to be the degradation mechanism mainly responsible for the variations observed, in all the investigated parameters.
ISSN:1530-4388
1558-2574
DOI:10.1109/7298.956701