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MBE growth of mid-infrared antimonide LEDs with strained electron barriers
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container_start_page | 600 |
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container_volume | 227-28 |
creator | LI, X HEBER, J PULLIN, M GEVAUX, D PHILLIPS, C. C |
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fullrecord | <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_14057372</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>14057372</sourcerecordid><originalsourceid>FETCH-pascalfrancis_primary_140573723</originalsourceid><addsrcrecordid>eNqNjL0KwjAURoMoWH_eIYtjIElb21mtiOjmXmKb6pU2KfcGxLc3gw_g8p3hHL4JS1RZpCKXUk9ZElcLqbNyzhZELyml2iqZsPN1V_EH-nd4ct_xAVoBrkODtuXGBRi8g9byS3Ug_oYYUUADLlrb2yagd_xuEMEirdisMz3Z9Y9LtjlWt_1JjIYa08dT1wDVI8Jg8FOrTOZFWuj03-4Lf4Y_nQ</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>MBE growth of mid-infrared antimonide LEDs with strained electron barriers</title><source>Elsevier:Jisc Collections:Elsevier Read and Publish Agreement 2022-2024:Freedom Collection (Reading list)</source><creator>LI, X ; HEBER, J ; PULLIN, M ; GEVAUX, D ; PHILLIPS, C. C</creator><creatorcontrib>LI, X ; HEBER, J ; PULLIN, M ; GEVAUX, D ; PHILLIPS, C. C</creatorcontrib><identifier>ISSN: 0022-0248</identifier><identifier>EISSN: 1873-5002</identifier><identifier>CODEN: JCRGAE</identifier><language>eng</language><publisher>Amsterdam: Elsevier</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Optoelectronic devices ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><ispartof>Journal of crystal growth, 2001, Vol.227-28, p.600-604</ispartof><rights>2002 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,780,784,789,790,4050,4051,23930,23931,25140</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=14057372$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>LI, X</creatorcontrib><creatorcontrib>HEBER, J</creatorcontrib><creatorcontrib>PULLIN, M</creatorcontrib><creatorcontrib>GEVAUX, D</creatorcontrib><creatorcontrib>PHILLIPS, C. C</creatorcontrib><title>MBE growth of mid-infrared antimonide LEDs with strained electron barriers</title><title>Journal of crystal growth</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Optoelectronic devices</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><issn>0022-0248</issn><issn>1873-5002</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2001</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNqNjL0KwjAURoMoWH_eIYtjIElb21mtiOjmXmKb6pU2KfcGxLc3gw_g8p3hHL4JS1RZpCKXUk9ZElcLqbNyzhZELyml2iqZsPN1V_EH-nd4ct_xAVoBrkODtuXGBRi8g9byS3Ug_oYYUUADLlrb2yagd_xuEMEirdisMz3Z9Y9LtjlWt_1JjIYa08dT1wDVI8Jg8FOrTOZFWuj03-4Lf4Y_nQ</recordid><startdate>2001</startdate><enddate>2001</enddate><creator>LI, X</creator><creator>HEBER, J</creator><creator>PULLIN, M</creator><creator>GEVAUX, D</creator><creator>PHILLIPS, C. C</creator><general>Elsevier</general><scope>IQODW</scope></search><sort><creationdate>2001</creationdate><title>MBE growth of mid-infrared antimonide LEDs with strained electron barriers</title><author>LI, X ; HEBER, J ; PULLIN, M ; GEVAUX, D ; PHILLIPS, C. C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pascalfrancis_primary_140573723</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2001</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Optoelectronic devices</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>LI, X</creatorcontrib><creatorcontrib>HEBER, J</creatorcontrib><creatorcontrib>PULLIN, M</creatorcontrib><creatorcontrib>GEVAUX, D</creatorcontrib><creatorcontrib>PHILLIPS, C. C</creatorcontrib><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LI, X</au><au>HEBER, J</au><au>PULLIN, M</au><au>GEVAUX, D</au><au>PHILLIPS, C. C</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>MBE growth of mid-infrared antimonide LEDs with strained electron barriers</atitle><btitle>Journal of crystal growth</btitle><date>2001</date><risdate>2001</risdate><volume>227-28</volume><spage>600</spage><epage>604</epage><pages>600-604</pages><issn>0022-0248</issn><eissn>1873-5002</eissn><coden>JCRGAE</coden><cop>Amsterdam</cop><pub>Elsevier</pub></addata></record> |
fulltext | fulltext |
identifier | ISSN: 0022-0248 |
ispartof | Journal of crystal growth, 2001, Vol.227-28, p.600-604 |
issn | 0022-0248 1873-5002 |
language | eng |
recordid | cdi_pascalfrancis_primary_14057372 |
source | Elsevier:Jisc Collections:Elsevier Read and Publish Agreement 2022-2024:Freedom Collection (Reading list) |
subjects | Applied sciences Electronics Exact sciences and technology Optoelectronic devices Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices |
title | MBE growth of mid-infrared antimonide LEDs with strained electron barriers |
url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-25T00%3A01%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=MBE%20growth%20of%20mid-infrared%20antimonide%20LEDs%20with%20strained%20electron%20barriers&rft.btitle=Journal%20of%20crystal%20growth&rft.au=LI,%20X&rft.date=2001&rft.volume=227-28&rft.spage=600&rft.epage=604&rft.pages=600-604&rft.issn=0022-0248&rft.eissn=1873-5002&rft.coden=JCRGAE&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E14057372%3C/pascalfrancis%3E%3Cgrp_id%3Ecdi_FETCH-pascalfrancis_primary_140573723%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |