Photoluminescence properties of homoepitaxial InP films grown by remote plasma MOCVD technique

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Bibliographic Details
Published in:Semiconductor science and technology 2000-07, Vol.15 (7), p.736-743
Main Authors: Perna, G, Capozzi, V, Lorusso, G F, Bruno, G, Losurdo, M, Capezzuto, P
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Exact sciences and technology
Iii-v semiconductors
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Physics
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/15/7/312