Interaction of excitons localized by a CdTe/ZnTe quantum well fluctuation potential with nonequilibrium acoustic phonons

It is found that the phonon flux generated by an external source induces a change of the luminescence bandshape of an ultrathin quantum well CdTe/ZnTe excited quasi-resonantly by a He-Ne laser. The effect of nonequilibrium phonons manifests itself even at small lasing power and large distance betwee...

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Published in:Nanotechnology 2001-12, Vol.12 (4), p.607-609
Main Authors: Onishchenko, E E, Bagaev, V S, Zaitsev, V V, Galkina, T I, Sharkov, A I
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Language:English
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container_title Nanotechnology
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creator Onishchenko, E E
Bagaev, V S
Zaitsev, V V
Galkina, T I
Sharkov, A I
description It is found that the phonon flux generated by an external source induces a change of the luminescence bandshape of an ultrathin quantum well CdTe/ZnTe excited quasi-resonantly by a He-Ne laser. The effect of nonequilibrium phonons manifests itself even at small lasing power and large distance between the phonon generation zone and the quasi-resonant luminescence excitation zone. It is assumed that the phonon flux induces the tunnel transitions between localized exciton states; these transitions are accompanied by stimulated phonon emission. (Author)
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title Interaction of excitons localized by a CdTe/ZnTe quantum well fluctuation potential with nonequilibrium acoustic phonons
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