Simulation of H-centre migration along dislocation lines applied to UV-induced afterglow in Eu doped alkali halides

• Published in: Radiation effects and defects in solids 2002-01, Vol.157 (6-12), p.705-708
• Main Authors: Piters, T. M., Álvarez-García, S.
• Format: Article
• Language: English
• Subjects: Afterglow; Alkali Halides; Computer Simulation; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Dislocation Lines; Exact sciences and technology; Interaction between different crystal defects; gettering effect; Physical radiation effects, radiation damage; Physics; Structure of solids and liquids; crystallography; Theories and models of crystal defects; Theory and models of radiation effects
• ISSN: 1042-0150; 1029-4953
• DOI: 10.1080/10420150215754

In this work we have simulated the migration of H centres along dislocation lines and their recombination with F z centres after a pulse irradiation. The variable parameter in our simulations was the probability p of recombination between H and F z centres when they meet. The results of the simulation for p =1 were in good agreement with a previous derived approximation and with the experimental data. We found that the function I = I 0 n m f could be fitted very well to the afterglow decay for all p values. The afterglow yield, defined as the total amount of afterglow, divided by the total amount of generated precursors of the H-F z pairs was found to decrease with increasing p . The exponent f however was found to be remarkably stable at 1.49 over a range of p from 1 to 0.2 below which it decreases to 0.5.