Patterning of Narrow Au Nanocluster Lines Using V2O5 Nanowire Masks and Ion-Beam Milling

A shadow mask technique employing V2O5 nanowires and ion-beam milling is used to define narrow lines of monolayer-encapsulated Au nanoclusters. When positioned between electrodes these lines are shown to be conducting and to have nonlinear I−V characteristics with nonzero threshold voltages consiste...

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Bibliographic Details
Published in:Nano letters 2003-02, Vol.3 (2), p.135-138
Main Authors: Ancona, M. G, Kooi, S. E, Kruppa, W, Snow, A. W, Foos, E. E, Whitman, L. J, Park, D, Shirey, L
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:A shadow mask technique employing V2O5 nanowires and ion-beam milling is used to define narrow lines of monolayer-encapsulated Au nanoclusters. When positioned between electrodes these lines are shown to be conducting and to have nonlinear I−V characteristics with nonzero threshold voltages consistent with Coulomb blockade.
ISSN:1530-6984
1530-6992
DOI:10.1021/nl0258224