Accurate Modeling of Quantum-Dot Based Multi Tunnel Junction Memory: Optimization and Process Dispersions Analyzes for DRAM Applications

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Bibliographic Details
Main Authors: Le Royer, C., Le Carval, G., Fraboulet, D., Sanquer, M.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Character generation
Dispersion
Electronics
Electrons
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic tunneling
MOSFET circuits
Nonvolatile memory
Performance analysis
Quantum dots
Random access memory
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Writing
Online Access:Request full text
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DOI:10.1109/ESSDERC.2002.194953