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Accurate Modeling of Quantum-Dot Based Multi Tunnel Junction Memory: Optimization and Process Dispersions Analyzes for DRAM Applications
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| creator | Le Royer, C. Le Carval, G. Fraboulet, D. Sanquer, M. |
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| doi_str_mv | 10.1109/ESSDERC.2002.194953 |
| format | conference_proceeding |
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| identifier | ISBN: 8890084782 |
| ispartof | 32nd European Solid-State Device Research Conference, 2002, p.403-406 |
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| language | eng |
| recordid | cdi_pascalfrancis_primary_14635743 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Applied sciences Character generation Dispersion Electronics Electrons Exact sciences and technology Integrated circuits Integrated circuits by function (including memories and processors) Magnetic tunneling MOSFET circuits Nonvolatile memory Performance analysis Quantum dots Random access memory Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Writing |
| title | Accurate Modeling of Quantum-Dot Based Multi Tunnel Junction Memory: Optimization and Process Dispersions Analyzes for DRAM Applications |
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