Analysis of morphology of porous silicon layers using Flicker noise spectroscopy

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Main Authors: PARKHUTIK, V, COLLINS, B, SAILOR, M, VSTOVSKY, G, TIMASHEV, S
Format: Conference Proceeding
Language:Russian
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creator PARKHUTIK, V
COLLINS, B
SAILOR, M
VSTOVSKY, G
TIMASHEV, S
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fullrecord <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_14836003</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>14836003</sourcerecordid><originalsourceid>FETCH-pascalfrancis_primary_148360033</originalsourceid><addsrcrecordid>eNqNjr0KwjAURoMoWH_eIYtjITVtbUcRi6ODg1sJIa3RNDfca4e8vRV8AKePczjDN2NJVuyzVNblfc4SIWSWVnVZLNmK6CmEyMVBJOx69MpFssSh4wNgeICDPn4pAMJInKyzGjx3KhokPpL1PW8m9zLIPVgynILRbwTSEOKGLTrlyGx_u2a75nw7XdKgSCvXofLaUhvQDgpjm-WVLKdz8t_uAxtKQ1w</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Analysis of morphology of porous silicon layers using Flicker noise spectroscopy</title><source>Wiley-Blackwell Read &amp; Publish Collection</source><creator>PARKHUTIK, V ; COLLINS, B ; SAILOR, M ; VSTOVSKY, G ; TIMASHEV, S</creator><creatorcontrib>PARKHUTIK, V ; COLLINS, B ; SAILOR, M ; VSTOVSKY, G ; TIMASHEV, S</creatorcontrib><identifier>ISSN: 0031-8965</identifier><identifier>EISSN: 1521-396X</identifier><identifier>CODEN: PSSABA</identifier><language>rus</language><publisher>Berlin: Wiley-VCH</publisher><ispartof>Physica status solidi. A. Applied research, 2003, Vol.197 (1), p.88-92</ispartof><rights>2003 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,780,784,789,790,4050,4051,23930,23931,25140</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=14836003$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>PARKHUTIK, V</creatorcontrib><creatorcontrib>COLLINS, B</creatorcontrib><creatorcontrib>SAILOR, M</creatorcontrib><creatorcontrib>VSTOVSKY, G</creatorcontrib><creatorcontrib>TIMASHEV, S</creatorcontrib><title>Analysis of morphology of porous silicon layers using Flicker noise spectroscopy</title><title>Physica status solidi. A. Applied research</title><issn>0031-8965</issn><issn>1521-396X</issn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2003</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNqNjr0KwjAURoMoWH_eIYtjITVtbUcRi6ODg1sJIa3RNDfca4e8vRV8AKePczjDN2NJVuyzVNblfc4SIWSWVnVZLNmK6CmEyMVBJOx69MpFssSh4wNgeICDPn4pAMJInKyzGjx3KhokPpL1PW8m9zLIPVgynILRbwTSEOKGLTrlyGx_u2a75nw7XdKgSCvXofLaUhvQDgpjm-WVLKdz8t_uAxtKQ1w</recordid><startdate>2003</startdate><enddate>2003</enddate><creator>PARKHUTIK, V</creator><creator>COLLINS, B</creator><creator>SAILOR, M</creator><creator>VSTOVSKY, G</creator><creator>TIMASHEV, S</creator><general>Wiley-VCH</general><scope>IQODW</scope></search><sort><creationdate>2003</creationdate><title>Analysis of morphology of porous silicon layers using Flicker noise spectroscopy</title><author>PARKHUTIK, V ; COLLINS, B ; SAILOR, M ; VSTOVSKY, G ; TIMASHEV, S</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pascalfrancis_primary_148360033</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>rus</language><creationdate>2003</creationdate><toplevel>online_resources</toplevel><creatorcontrib>PARKHUTIK, V</creatorcontrib><creatorcontrib>COLLINS, B</creatorcontrib><creatorcontrib>SAILOR, M</creatorcontrib><creatorcontrib>VSTOVSKY, G</creatorcontrib><creatorcontrib>TIMASHEV, S</creatorcontrib><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>PARKHUTIK, V</au><au>COLLINS, B</au><au>SAILOR, M</au><au>VSTOVSKY, G</au><au>TIMASHEV, S</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Analysis of morphology of porous silicon layers using Flicker noise spectroscopy</atitle><btitle>Physica status solidi. A. Applied research</btitle><date>2003</date><risdate>2003</risdate><volume>197</volume><issue>1</issue><spage>88</spage><epage>92</epage><pages>88-92</pages><issn>0031-8965</issn><eissn>1521-396X</eissn><coden>PSSABA</coden><cop>Berlin</cop><pub>Wiley-VCH</pub></addata></record>
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identifier ISSN: 0031-8965
ispartof Physica status solidi. A. Applied research, 2003, Vol.197 (1), p.88-92
issn 0031-8965
1521-396X
language rus
recordid cdi_pascalfrancis_primary_14836003
source Wiley-Blackwell Read & Publish Collection
title Analysis of morphology of porous silicon layers using Flicker noise spectroscopy
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-27T19%3A06%3A35IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Analysis%20of%20morphology%20of%20porous%20silicon%20layers%20using%20Flicker%20noise%20spectroscopy&rft.btitle=Physica%20status%20solidi.%20A.%20Applied%20research&rft.au=PARKHUTIK,%20V&rft.date=2003&rft.volume=197&rft.issue=1&rft.spage=88&rft.epage=92&rft.pages=88-92&rft.issn=0031-8965&rft.eissn=1521-396X&rft.coden=PSSABA&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E14836003%3C/pascalfrancis%3E%3Cgrp_id%3Ecdi_FETCH-pascalfrancis_primary_148360033%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true