THERMAL STRESSES IN MICROELECTRONICS SUBASSEMBLIES: QUANTITATIVE CHARACTERIZATION USING PHOTOMECHANICS METHODS

Several optical methods for in-situ displacement measurement are presented as a tool to characterize thermomechanical behavior of microelectronics subassemblies. Features and recent developments of the methods are reviewed and applications to diverse problems are illustrated to demonstrate wide appl...

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Bibliographic Details
Published in:Journal of thermal stresses 2003-06, Vol.26 (6), p.583-613
Main Author: Han, Bongtae
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Far Infrared Fizeau Interferometry
Fundamental areas of phenomenology (including applications)
Interconnections
Measurement and testing methods
Measurement methods and techniques in continuum mechanics of solids
Microelectronics Packaging
Microscopic Moiré Interferometry
Moiré Interferometry
Photomechanics Methods
Physics
Shadow Moiré
Solid mechanics
Structural and continuum mechanics
Testing, measurement, noise and reliability
Twyman/Green Interferometry
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Description
Summary:Several optical methods for in-situ displacement measurement are presented as a tool to characterize thermomechanical behavior of microelectronics subassemblies. Features and recent developments of the methods are reviewed and applications to diverse problems are illustrated to demonstrate wide applicability of the methods. The whole-field displacement information, with various sensitivity and resolution scales, is ideally suited for the deformation study of a broad range of problems in microelectronics packaging. The methods are mature and they can be practiced routinely. More applications are anticipated.
ISSN:0149-5739
1521-074X
DOI:10.1080/713855954