C–V characterization of strained Si/SiGe multiple heterojunction capacitors as a tool for heterojunction MOSFET channel design

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Bibliographic Details
Published in:Semiconductor science and technology 2003-08, Vol.18 (8), p.738-744
Main Authors: Chattopadhyay, S, Kwa, K S K, Olsen, S H, Driscoll, L S, O'Neill, A G
Format: Article
Language:English
Subjects:
Applied sciences
Capacitors
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Field effect devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/18/8/304