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Characterization of ZnSe films grown on GaAs substrates with InxGa1-x as and AlxGa1-x as buffer layers

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Main Authors: LUYO-ALVARADO, J, SANTANA-ARANDA, M. A, MELENDEZ-LIRA, M, LOPEZ-LOPEZ, M, MENDEZ, V. H, VIDAL, M. A, YONEZU, H
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creator LUYO-ALVARADO, J
SANTANA-ARANDA, M. A
MELENDEZ-LIRA, M
LOPEZ-LOPEZ, M
MENDEZ, V. H
VIDAL, M. A
YONEZU, H
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ispartof Thin solid films, 2000, Vol.373 (1-2), p.37-40
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1879-2731
language eng
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source ScienceDirect Freedom Collection 2022-2024
subjects Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Ii-vi semiconductors
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of specific thin films
Photoluminescence
Physics
title Characterization of ZnSe films grown on GaAs substrates with InxGa1-x as and AlxGa1-x as buffer layers
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