GaInP/GaAs tunnel collector HBTs: base-collector barrier height analysis

Tunnel collector HBTs employ a thin layer of GaInP between the GaAs base and collector regions, in order to suppress hole injection when the base-collector junction is forward biased. Devices with a low offset voltage of 30 mV, and low knee voltage of /spl sim/0.3 V, while still maintaining high cur...

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Bibliographic Details
Main Authors: Keogh, D.M., Welty, R.J., Lopez-Gonzalez, J., Lutz, C.R., Welser, R.E., Asbeck, P.M.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Broadband amplifiers
Charge carrier processes
Electronics
Electrons
Exact sciences and technology
Gallium arsenide
Heterojunction bipolar transistors
Knee
Low voltage
Performance gain
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thermal conductivity
Transistors
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Summary:Tunnel collector HBTs employ a thin layer of GaInP between the GaAs base and collector regions, in order to suppress hole injection when the base-collector junction is forward biased. Devices with a low offset voltage of 30 mV, and low knee voltage of /spl sim/0.3 V, while still maintaining high current gain (170), and good RF performance with f/sub T/=54 GHz and f/sub MAX/=68 GHz have been demonstrated. The devices exhibit increased output conductance as compared to conventional GaInP/GaAs SHBTs, due to a residual barrier at the base-collector junction. This paper presents an experimental method for the determination of such barriers, by analyzing the collector current as a function of applied base-collector voltage, V/sub CB/.
DOI:10.1109/LECHPD.2002.1146775