A 1.8-V operation RFCMOS transceiver for Bluetooth

This paper describes a single-chip Bluetooth transceiver LSI, which uses a standard 0.18 /spl mu/m bulk CMOS process. It can operate at a supply voltage of 1.8 V, and includes even a low loss transmit/receive antenna switch (SW) in order to realize high level integration. For lower chip area, a chan...

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Bibliographic Details
Main Authors: Komurasaki, H., Heima, T., Miwa, T., Yamamoto, K., Wakada, H., Yasui, I., Ono, M., Sano, T., Sato, H., Miki, T., Kato, N.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Band pass filters
Baseband
Bluetooth
Circuit properties
CMOS process
CMOS technology
Design. Technologies. Operation analysis. Testing
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Energy consumption
Exact sciences and technology
Integrated circuits
Radio frequency
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Switching, multiplexing, switched capacity circuits
Transceivers
Transmitting antennas
Voltage
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Description
Summary:This paper describes a single-chip Bluetooth transceiver LSI, which uses a standard 0.18 /spl mu/m bulk CMOS process. It can operate at a supply voltage of 1.8 V, and includes even a low loss transmit/receive antenna switch (SW) in order to realize high level integration. For lower chip area, a channel selection filter consists of simple linearized source-coupled pairs, and the transceiver occupies 10.2 mm/sup 2/.
DOI:10.1109/VLSIC.2002.1015092