Investigation of realistic dopant fluctuation induced device characteristics variation for sub-100nm CMOS by using atomistic 3D process/device simulator

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Bibliographic Details
Main Authors: EZAKI, Tatsuya, IKEZAWA, Takeo, HANE, Masami
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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