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Performance enhancement on sub-70nm strained silicon SOI MOSFETs on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D

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Main Authors: LEE, B. H, MOCUTA, A, LAVOIE, C, MOCUTA, D, CHAKRAVARTI, A, MITCHELL, R. M, MEZZAPELLE, J, JAMIN, F, SENDELBACH, M, KERMEL, H, GRIBELYUK, M, DOMENICUCCI, A, BEDELL, S, JENKINS, K. A, NARASIMHA, S, KU, S. H, IEONG, M, YANG, I. Y, LEOBANDUNG, E, AGNELLO, P, HAENSCH, W, WELSER, J, CHEN, H, SADANA, D, RIM, K, O'NEIL, P, MO, R, CHAN, K, CABRAL, C
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Language:English
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creator LEE, B. H
MOCUTA, A
LAVOIE, C
MOCUTA, D
CHAKRAVARTI, A
MITCHELL, R. M
MEZZAPELLE, J
JAMIN, F
SENDELBACH, M
KERMEL, H
GRIBELYUK, M
DOMENICUCCI, A
BEDELL, S
JENKINS, K. A
NARASIMHA, S
KU, S. H
IEONG, M
YANG, I. Y
LEOBANDUNG, E
AGNELLO, P
HAENSCH, W
WELSER, J
CHEN, H
SADANA, D
RIM, K
O'NEIL, P
MO, R
CHAN, K
CABRAL, C
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fullrecord <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_15785984</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>15785984</sourcerecordid><originalsourceid>FETCH-LOGICAL-p115t-4d1a35ef6199ebc5a38afe5e613fefd5bda8ee3db9b7b7f444e027442024512e3</originalsourceid><addsrcrecordid>eNpdkFFLwzAUhQsiKLP_IS-CPpQ1TbI0jzJ1FjYqdD6PtL2hkTQbSYru__hDTZlPXi6ch3u-c-BeJangZR6XcLoq8E2Sev-ZxyGCEsFuk593cOroRmk7QGCHWUewAR0t8lOb8dyOyAcntYUeeW10Fy9NXaFd3by-7P1snEw0ZGHQFoUBYpgxZzTq75n4hy4bvYGZ0dZPRoaje9jvsmZTV49z32wPgL50GFAEfQSb5fNdcq2k8ZD-6SL5iNXrt2xbb6r10zY7YcxCRnssCQO1wkJA2zFJSqmAwQoTBapnbS9LANK3ouUtV5RSyAtOaZEXlOECyCK5v-SepO-kUS5-Q_vDyelRuvMBM14yUVLyC0X4awo</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Performance enhancement on sub-70nm strained silicon SOI MOSFETs on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>LEE, B. H ; MOCUTA, A ; LAVOIE, C ; MOCUTA, D ; CHAKRAVARTI, A ; MITCHELL, R. M ; MEZZAPELLE, J ; JAMIN, F ; SENDELBACH, M ; KERMEL, H ; GRIBELYUK, M ; DOMENICUCCI, A ; BEDELL, S ; JENKINS, K. A ; NARASIMHA, S ; KU, S. H ; IEONG, M ; YANG, I. Y ; LEOBANDUNG, E ; AGNELLO, P ; HAENSCH, W ; WELSER, J ; CHEN, H ; SADANA, D ; RIM, K ; O'NEIL, P ; MO, R ; CHAN, K ; CABRAL, C</creator><creatorcontrib>LEE, B. H ; MOCUTA, A ; LAVOIE, C ; MOCUTA, D ; CHAKRAVARTI, A ; MITCHELL, R. M ; MEZZAPELLE, J ; JAMIN, F ; SENDELBACH, M ; KERMEL, H ; GRIBELYUK, M ; DOMENICUCCI, A ; BEDELL, S ; JENKINS, K. A ; NARASIMHA, S ; KU, S. H ; IEONG, M ; YANG, I. Y ; LEOBANDUNG, E ; AGNELLO, P ; HAENSCH, W ; WELSER, J ; CHEN, H ; SADANA, D ; RIM, K ; O'NEIL, P ; MO, R ; CHAN, K ; CABRAL, C</creatorcontrib><identifier>ISBN: 9780780374621</identifier><identifier>ISBN: 0780374622</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><creationdate>2002</creationdate><rights>2004 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,780,784,789,4050</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=15785984$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>LEE, B. H</creatorcontrib><creatorcontrib>MOCUTA, A</creatorcontrib><creatorcontrib>LAVOIE, C</creatorcontrib><creatorcontrib>MOCUTA, D</creatorcontrib><creatorcontrib>CHAKRAVARTI, A</creatorcontrib><creatorcontrib>MITCHELL, R. M</creatorcontrib><creatorcontrib>MEZZAPELLE, J</creatorcontrib><creatorcontrib>JAMIN, F</creatorcontrib><creatorcontrib>SENDELBACH, M</creatorcontrib><creatorcontrib>KERMEL, H</creatorcontrib><creatorcontrib>GRIBELYUK, M</creatorcontrib><creatorcontrib>DOMENICUCCI, A</creatorcontrib><creatorcontrib>BEDELL, S</creatorcontrib><creatorcontrib>JENKINS, K. A</creatorcontrib><creatorcontrib>NARASIMHA, S</creatorcontrib><creatorcontrib>KU, S. H</creatorcontrib><creatorcontrib>IEONG, M</creatorcontrib><creatorcontrib>YANG, I. Y</creatorcontrib><creatorcontrib>LEOBANDUNG, E</creatorcontrib><creatorcontrib>AGNELLO, P</creatorcontrib><creatorcontrib>HAENSCH, W</creatorcontrib><creatorcontrib>WELSER, J</creatorcontrib><creatorcontrib>CHEN, H</creatorcontrib><creatorcontrib>SADANA, D</creatorcontrib><creatorcontrib>RIM, K</creatorcontrib><creatorcontrib>O'NEIL, P</creatorcontrib><creatorcontrib>MO, R</creatorcontrib><creatorcontrib>CHAN, K</creatorcontrib><creatorcontrib>CABRAL, C</creatorcontrib><title>Performance enhancement on sub-70nm strained silicon SOI MOSFETs on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><isbn>9780780374621</isbn><isbn>0780374622</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNpdkFFLwzAUhQsiKLP_IS-CPpQ1TbI0jzJ1FjYqdD6PtL2hkTQbSYru__hDTZlPXi6ch3u-c-BeJangZR6XcLoq8E2Sev-ZxyGCEsFuk593cOroRmk7QGCHWUewAR0t8lOb8dyOyAcntYUeeW10Fy9NXaFd3by-7P1snEw0ZGHQFoUBYpgxZzTq75n4hy4bvYGZ0dZPRoaje9jvsmZTV49z32wPgL50GFAEfQSb5fNdcq2k8ZD-6SL5iNXrt2xbb6r10zY7YcxCRnssCQO1wkJA2zFJSqmAwQoTBapnbS9LANK3ouUtV5RSyAtOaZEXlOECyCK5v-SepO-kUS5-Q_vDyelRuvMBM14yUVLyC0X4awo</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>LEE, B. H</creator><creator>MOCUTA, A</creator><creator>LAVOIE, C</creator><creator>MOCUTA, D</creator><creator>CHAKRAVARTI, A</creator><creator>MITCHELL, R. M</creator><creator>MEZZAPELLE, J</creator><creator>JAMIN, F</creator><creator>SENDELBACH, M</creator><creator>KERMEL, H</creator><creator>GRIBELYUK, M</creator><creator>DOMENICUCCI, A</creator><creator>BEDELL, S</creator><creator>JENKINS, K. A</creator><creator>NARASIMHA, S</creator><creator>KU, S. H</creator><creator>IEONG, M</creator><creator>YANG, I. Y</creator><creator>LEOBANDUNG, E</creator><creator>AGNELLO, P</creator><creator>HAENSCH, W</creator><creator>WELSER, J</creator><creator>CHEN, H</creator><creator>SADANA, D</creator><creator>RIM, K</creator><creator>O'NEIL, P</creator><creator>MO, R</creator><creator>CHAN, K</creator><creator>CABRAL, C</creator><general>IEEE</general><scope>IQODW</scope></search><sort><creationdate>2002</creationdate><title>Performance enhancement on sub-70nm strained silicon SOI MOSFETs on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D</title><author>LEE, B. H ; MOCUTA, A ; LAVOIE, C ; MOCUTA, D ; CHAKRAVARTI, A ; MITCHELL, R. M ; MEZZAPELLE, J ; JAMIN, F ; SENDELBACH, M ; KERMEL, H ; GRIBELYUK, M ; DOMENICUCCI, A ; BEDELL, S ; JENKINS, K. A ; NARASIMHA, S ; KU, S. H ; IEONG, M ; YANG, I. Y ; LEOBANDUNG, E ; AGNELLO, P ; HAENSCH, W ; WELSER, J ; CHEN, H ; SADANA, D ; RIM, K ; O'NEIL, P ; MO, R ; CHAN, K ; CABRAL, C</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-p115t-4d1a35ef6199ebc5a38afe5e613fefd5bda8ee3db9b7b7f444e027442024512e3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>LEE, B. H</creatorcontrib><creatorcontrib>MOCUTA, A</creatorcontrib><creatorcontrib>LAVOIE, C</creatorcontrib><creatorcontrib>MOCUTA, D</creatorcontrib><creatorcontrib>CHAKRAVARTI, A</creatorcontrib><creatorcontrib>MITCHELL, R. M</creatorcontrib><creatorcontrib>MEZZAPELLE, J</creatorcontrib><creatorcontrib>JAMIN, F</creatorcontrib><creatorcontrib>SENDELBACH, M</creatorcontrib><creatorcontrib>KERMEL, H</creatorcontrib><creatorcontrib>GRIBELYUK, M</creatorcontrib><creatorcontrib>DOMENICUCCI, A</creatorcontrib><creatorcontrib>BEDELL, S</creatorcontrib><creatorcontrib>JENKINS, K. A</creatorcontrib><creatorcontrib>NARASIMHA, S</creatorcontrib><creatorcontrib>KU, S. H</creatorcontrib><creatorcontrib>IEONG, M</creatorcontrib><creatorcontrib>YANG, I. Y</creatorcontrib><creatorcontrib>LEOBANDUNG, E</creatorcontrib><creatorcontrib>AGNELLO, P</creatorcontrib><creatorcontrib>HAENSCH, W</creatorcontrib><creatorcontrib>WELSER, J</creatorcontrib><creatorcontrib>CHEN, H</creatorcontrib><creatorcontrib>SADANA, D</creatorcontrib><creatorcontrib>RIM, K</creatorcontrib><creatorcontrib>O'NEIL, P</creatorcontrib><creatorcontrib>MO, R</creatorcontrib><creatorcontrib>CHAN, K</creatorcontrib><creatorcontrib>CABRAL, C</creatorcontrib><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>LEE, B. H</au><au>MOCUTA, A</au><au>LAVOIE, C</au><au>MOCUTA, D</au><au>CHAKRAVARTI, A</au><au>MITCHELL, R. M</au><au>MEZZAPELLE, J</au><au>JAMIN, F</au><au>SENDELBACH, M</au><au>KERMEL, H</au><au>GRIBELYUK, M</au><au>DOMENICUCCI, A</au><au>BEDELL, S</au><au>JENKINS, K. A</au><au>NARASIMHA, S</au><au>KU, S. H</au><au>IEONG, M</au><au>YANG, I. Y</au><au>LEOBANDUNG, E</au><au>AGNELLO, P</au><au>HAENSCH, W</au><au>WELSER, J</au><au>CHEN, H</au><au>SADANA, D</au><au>RIM, K</au><au>O'NEIL, P</au><au>MO, R</au><au>CHAN, K</au><au>CABRAL, C</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Performance enhancement on sub-70nm strained silicon SOI MOSFETs on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D</atitle><date>2002</date><risdate>2002</risdate><spage>946</spage><epage>948</epage><pages>946-948</pages><isbn>9780780374621</isbn><isbn>0780374622</isbn><cop>Piscataway NJ</cop><pub>IEEE</pub><tpages>3</tpages></addata></record>
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source IEEE Electronic Library (IEL) Conference Proceedings
subjects Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Performance enhancement on sub-70nm strained silicon SOI MOSFETs on ultra-thin thermally mixed strained silicon/SiGe on insulator(TM-SGOI) substrate with raised S/D
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-06T17%3A04%3A41IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Performance%20enhancement%20on%20sub-70nm%20strained%20silicon%20SOI%20MOSFETs%20on%20ultra-thin%20thermally%20mixed%20strained%20silicon/SiGe%20on%20insulator(TM-SGOI)%20substrate%20with%20raised%20S/D&rft.au=LEE,%20B.%20H&rft.date=2002&rft.spage=946&rft.epage=948&rft.pages=946-948&rft.isbn=9780780374621&rft.isbn_list=0780374622&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E15785984%3C/pascalfrancis%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-p115t-4d1a35ef6199ebc5a38afe5e613fefd5bda8ee3db9b7b7f444e027442024512e3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true