Structural and electrical characteristics of epitaxial CoSi2grown on n-Si0.83Ge0.17/n-Si(001) by reactive chemical vapor deposition using a Si capping layer

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Bibliographic Details
Published in:Thin solid films 2004, Vol.458 (1-2), p.269-273
Main Authors: SHIN, D. O, BAN, S. H, AHN, Y. S, LEE, Y. S, LEE, N.-E, SHIM, K.-H
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Other inorganic semiconductors
Physics
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ISSN:0040-6090
1879-2731