Interface effects on the resonant tunnelling in GaAs/AlxGa1−xAs double-quantum-well triple-barriers

Theoretical results concerning the transmission properties of graded GaAs/AlxGa1−xAs Double-Quantum-Well Triple-Barriers (DQW-TB) are presented. It is shown that the existence of nonabrupt interfaces shifts the tunnelling resonances toward low energies, and is responsible for a significant reduction...

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Bibliographic Details
Published in:Microelectronic engineering 1998-08, Vol.43-44, p.191-195
Main Authors: Lima, Maria Consuelo A, Farias, Gil A, Freire, Valder N
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Design. Technologies. Operation analysis. Testing
Double quantum wells-triple barriers
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronics
Exact sciences and technology
GaAs/AlxGa1−xAs heterostructures
Iii-v semiconductors
Integrated circuits
Interface effects
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Tunnelling properties
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Summary:Theoretical results concerning the transmission properties of graded GaAs/AlxGa1−xAs Double-Quantum-Well Triple-Barriers (DQW-TB) are presented. It is shown that the existence of nonabrupt interfaces shifts the tunnelling resonances toward low energies, and is responsible for a significant reduction in the splitting of the double resonant peaks. The electric field effects on the transmission properties of GaAs/AlxGa1−xAs DQW-TB also change when the existence of nonabrupt interfaces are considered.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(98)00163-4