In-line electrical characterization of ultrathin gate dielectric films

In this paper, in-line measurements of ultrathin gate dielectrics are reported. Various plasma nitrided oxides down to 1.5 nm EOT have been studied using in-line optical and non-contact electrical measurement techniques. The good correlation obtained with physical analysis and "classic" ca...

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Bibliographic Details
Main Authors: Cubaynes, F., Passefort, S., Eason, K., Xiafang Zhang, Date, L., Pique, D., Conard, T., Rothschild, A., Schaekers, M.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Capacitance
Capacitance-voltage characteristics
Dielectric films
Dielectric measurements
Electronics
Exact sciences and technology
Materials
Optical films
Oxidation
Performance evaluation
Plasma measurements
Silicon
Vibration measurement
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Summary:In this paper, in-line measurements of ultrathin gate dielectrics are reported. Various plasma nitrided oxides down to 1.5 nm EOT have been studied using in-line optical and non-contact electrical measurement techniques. The good correlation obtained with physical analysis and "classic" capacitance-voltage measurements shows the suitability of in-line measurement techniques for a first qualitative evaluation of ultrathin dielectric films.
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2002.1001563