In-line electrical characterization of ultrathin gate dielectric films

In this paper, in-line measurements of ultrathin gate dielectrics are reported. Various plasma nitrided oxides down to 1.5 nm EOT have been studied using in-line optical and non-contact electrical measurement techniques. The good correlation obtained with physical analysis and "classic" ca...

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Main Authors: Cubaynes, F., Passefort, S., Eason, K., Xiafang Zhang, Date, L., Pique, D., Conard, T., Rothschild, A., Schaekers, M.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Capacitance
Capacitance-voltage characteristics
Dielectric films
Dielectric measurements
Electronics
Exact sciences and technology
Materials
Optical films
Oxidation
Performance evaluation
Plasma measurements
Silicon
Vibration measurement
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creator Cubaynes, F.
Passefort, S.
Eason, K.
Xiafang Zhang
Date, L.
Pique, D.
Conard, T.
Rothschild, A.
Schaekers, M.
description In this paper, in-line measurements of ultrathin gate dielectrics are reported. Various plasma nitrided oxides down to 1.5 nm EOT have been studied using in-line optical and non-contact electrical measurement techniques. The good correlation obtained with physical analysis and "classic" capacitance-voltage measurements shows the suitability of in-line measurement techniques for a first qualitative evaluation of ultrathin dielectric films.
doi_str_mv 10.1109/ASMC.2002.1001563
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fullrecord <record><control><sourceid>pascalfrancis_6IE</sourceid><recordid>TN_cdi_pascalfrancis_primary_15852659</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1001563</ieee_id><sourcerecordid>15852659</sourcerecordid><originalsourceid>FETCH-LOGICAL-i118t-f1c62bd019cc8965a880a4e100bb03b6b26c7aeefad2032d08ff0959ad0083e83</originalsourceid><addsrcrecordid>eNpFkE1LAzEQhoMfYKn9AeIlF49bJ8kmmxxL8aNQ8aCey2x2YiPbbcnGg_56A1UcXhiGeRjedxi7EjAXAtzt4uVpOZcAci4AhDbqhE2kakxljGtO2cw1FopUI7RVZ2wiylTZplYXbDaOH1Cq1jWAm7D71VD1cSBOPfmcosee-y0m9JlS_MYc9wPfB_7Z54R5Gwf-jpl4F_94HmK_Gy_ZecB-pNlvn7K3-7vX5WO1fn5YLRfrKgphcxWEN7LtQDjvrTMarQWsqaRoW1CtaaXxDRIF7CQo2YENAZx22AFYRVZN2c3x7gHHYjUkHHwcN4cUd5i-NiWvlka7wl0fuUhE_-vjt9QPes9bkA</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>In-line electrical characterization of ultrathin gate dielectric films</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Cubaynes, F. ; Passefort, S. ; Eason, K. ; Xiafang Zhang ; Date, L. ; Pique, D. ; Conard, T. ; Rothschild, A. ; Schaekers, M.</creator><creatorcontrib>Cubaynes, F. ; Passefort, S. ; Eason, K. ; Xiafang Zhang ; Date, L. ; Pique, D. ; Conard, T. ; Rothschild, A. ; Schaekers, M.</creatorcontrib><description>In this paper, in-line measurements of ultrathin gate dielectrics are reported. Various plasma nitrided oxides down to 1.5 nm EOT have been studied using in-line optical and non-contact electrical measurement techniques. The good correlation obtained with physical analysis and "classic" capacitance-voltage measurements shows the suitability of in-line measurement techniques for a first qualitative evaluation of ultrathin dielectric films.</description><identifier>ISSN: 1078-8743</identifier><identifier>ISBN: 9780780371583</identifier><identifier>ISBN: 0780371585</identifier><identifier>EISSN: 2376-6697</identifier><identifier>DOI: 10.1109/ASMC.2002.1001563</identifier><language>eng</language><publisher>Piscataway NJ: IEEE</publisher><subject>Applied sciences ; Capacitance ; Capacitance-voltage characteristics ; Dielectric films ; Dielectric measurements ; Electronics ; Exact sciences and technology ; Materials ; Optical films ; Oxidation ; Performance evaluation ; Plasma measurements ; Silicon ; Vibration measurement</subject><ispartof>13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259), 2002, p.1-5</ispartof><rights>2004 INIST-CNRS</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1001563$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,4036,4037,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/1001563$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=15852659$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Cubaynes, F.</creatorcontrib><creatorcontrib>Passefort, S.</creatorcontrib><creatorcontrib>Eason, K.</creatorcontrib><creatorcontrib>Xiafang Zhang</creatorcontrib><creatorcontrib>Date, L.</creatorcontrib><creatorcontrib>Pique, D.</creatorcontrib><creatorcontrib>Conard, T.</creatorcontrib><creatorcontrib>Rothschild, A.</creatorcontrib><creatorcontrib>Schaekers, M.</creatorcontrib><title>In-line electrical characterization of ultrathin gate dielectric films</title><title>13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259)</title><addtitle>ASMC</addtitle><description>In this paper, in-line measurements of ultrathin gate dielectrics are reported. Various plasma nitrided oxides down to 1.5 nm EOT have been studied using in-line optical and non-contact electrical measurement techniques. The good correlation obtained with physical analysis and "classic" capacitance-voltage measurements shows the suitability of in-line measurement techniques for a first qualitative evaluation of ultrathin dielectric films.</description><subject>Applied sciences</subject><subject>Capacitance</subject><subject>Capacitance-voltage characteristics</subject><subject>Dielectric films</subject><subject>Dielectric measurements</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Materials</subject><subject>Optical films</subject><subject>Oxidation</subject><subject>Performance evaluation</subject><subject>Plasma measurements</subject><subject>Silicon</subject><subject>Vibration measurement</subject><issn>1078-8743</issn><issn>2376-6697</issn><isbn>9780780371583</isbn><isbn>0780371585</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2002</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNpFkE1LAzEQhoMfYKn9AeIlF49bJ8kmmxxL8aNQ8aCey2x2YiPbbcnGg_56A1UcXhiGeRjedxi7EjAXAtzt4uVpOZcAci4AhDbqhE2kakxljGtO2cw1FopUI7RVZ2wiylTZplYXbDaOH1Cq1jWAm7D71VD1cSBOPfmcosee-y0m9JlS_MYc9wPfB_7Z54R5Gwf-jpl4F_94HmK_Gy_ZecB-pNlvn7K3-7vX5WO1fn5YLRfrKgphcxWEN7LtQDjvrTMarQWsqaRoW1CtaaXxDRIF7CQo2YENAZx22AFYRVZN2c3x7gHHYjUkHHwcN4cUd5i-NiWvlka7wl0fuUhE_-vjt9QPes9bkA</recordid><startdate>2002</startdate><enddate>2002</enddate><creator>Cubaynes, F.</creator><creator>Passefort, S.</creator><creator>Eason, K.</creator><creator>Xiafang Zhang</creator><creator>Date, L.</creator><creator>Pique, D.</creator><creator>Conard, T.</creator><creator>Rothschild, A.</creator><creator>Schaekers, M.</creator><general>IEEE</general><scope>6IE</scope><scope>6IH</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIO</scope><scope>IQODW</scope></search><sort><creationdate>2002</creationdate><title>In-line electrical characterization of ultrathin gate dielectric films</title><author>Cubaynes, F. ; Passefort, S. ; Eason, K. ; Xiafang Zhang ; Date, L. ; Pique, D. ; Conard, T. ; Rothschild, A. ; Schaekers, M.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i118t-f1c62bd019cc8965a880a4e100bb03b6b26c7aeefad2032d08ff0959ad0083e83</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2002</creationdate><topic>Applied sciences</topic><topic>Capacitance</topic><topic>Capacitance-voltage characteristics</topic><topic>Dielectric films</topic><topic>Dielectric measurements</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Materials</topic><topic>Optical films</topic><topic>Oxidation</topic><topic>Performance evaluation</topic><topic>Plasma measurements</topic><topic>Silicon</topic><topic>Vibration measurement</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cubaynes, F.</creatorcontrib><creatorcontrib>Passefort, S.</creatorcontrib><creatorcontrib>Eason, K.</creatorcontrib><creatorcontrib>Xiafang Zhang</creatorcontrib><creatorcontrib>Date, L.</creatorcontrib><creatorcontrib>Pique, D.</creatorcontrib><creatorcontrib>Conard, T.</creatorcontrib><creatorcontrib>Rothschild, A.</creatorcontrib><creatorcontrib>Schaekers, M.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan (POP) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Xplore</collection><collection>IEEE Proceedings Order Plans (POP) 1998-present</collection><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Cubaynes, F.</au><au>Passefort, S.</au><au>Eason, K.</au><au>Xiafang Zhang</au><au>Date, L.</au><au>Pique, D.</au><au>Conard, T.</au><au>Rothschild, A.</au><au>Schaekers, M.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>In-line electrical characterization of ultrathin gate dielectric films</atitle><btitle>13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259)</btitle><stitle>ASMC</stitle><date>2002</date><risdate>2002</risdate><spage>1</spage><epage>5</epage><pages>1-5</pages><issn>1078-8743</issn><eissn>2376-6697</eissn><isbn>9780780371583</isbn><isbn>0780371585</isbn><abstract>In this paper, in-line measurements of ultrathin gate dielectrics are reported. Various plasma nitrided oxides down to 1.5 nm EOT have been studied using in-line optical and non-contact electrical measurement techniques. The good correlation obtained with physical analysis and "classic" capacitance-voltage measurements shows the suitability of in-line measurement techniques for a first qualitative evaluation of ultrathin dielectric films.</abstract><cop>Piscataway NJ</cop><pub>IEEE</pub><doi>10.1109/ASMC.2002.1001563</doi><tpages>5</tpages></addata></record>
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identifier ISSN: 1078-8743
ispartof 13th Annual IEEE/SEMI Advanced Semiconductor Manufacturing Conference. Advancing the Science and Technology of Semiconductor Manufacturing. ASMC 2002 (Cat. No.02CH37259), 2002, p.1-5
issn 1078-8743
2376-6697
language eng
recordid cdi_pascalfrancis_primary_15852659
source IEEE Electronic Library (IEL) Conference Proceedings
subjects Applied sciences
Capacitance
Capacitance-voltage characteristics
Dielectric films
Dielectric measurements
Electronics
Exact sciences and technology
Materials
Optical films
Oxidation
Performance evaluation
Plasma measurements
Silicon
Vibration measurement
title In-line electrical characterization of ultrathin gate dielectric films
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-28T17%3A55%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=In-line%20electrical%20characterization%20of%20ultrathin%20gate%20dielectric%20films&rft.btitle=13th%20Annual%20IEEE/SEMI%20Advanced%20Semiconductor%20Manufacturing%20Conference.%20Advancing%20the%20Science%20and%20Technology%20of%20Semiconductor%20Manufacturing.%20ASMC%202002%20(Cat.%20No.02CH37259)&rft.au=Cubaynes,%20F.&rft.date=2002&rft.spage=1&rft.epage=5&rft.pages=1-5&rft.issn=1078-8743&rft.eissn=2376-6697&rft.isbn=9780780371583&rft.isbn_list=0780371585&rft_id=info:doi/10.1109/ASMC.2002.1001563&rft_dat=%3Cpascalfrancis_6IE%3E15852659%3C/pascalfrancis_6IE%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-i118t-f1c62bd019cc8965a880a4e100bb03b6b26c7aeefad2032d08ff0959ad0083e83%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=1001563&rfr_iscdi=true