Surfactant behavior and study in slurry

The device features increasingly smaller and complex circuitry in the process 0.15 /spl mu/m technology and beyond 0.15 /spl mu/m. The layers of interconnect are increase. year to year and the number of transistors are increased dramatically. It means Chemical Mechanical Polish (CMP) is important da...

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Bibliographic Details
Main Authors: Bih-Tiao Lin, Chen, C.S., Yeh, W.K., Peng, S.N.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Chemical technology
Design. Technologies. Operation analysis. Testing
Dielectrics
Electronics
Exact sciences and technology
Integrated circuits
Manufacturing industries
Mass production
Microelectronic fabrication (materials and surfaces technology)
Planarization
Semiconductor device manufacture
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor thin films
Slurries
Surfaces
Thin film circuits
Transistors
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Summary:The device features increasingly smaller and complex circuitry in the process 0.15 /spl mu/m technology and beyond 0.15 /spl mu/m. The layers of interconnect are increase. year to year and the number of transistors are increased dramatically. It means Chemical Mechanical Polish (CMP) is important day to day. Slurry and polish pad are the key parameters in Chemical Mechanical Polish (CMP) due to small Lithograph window and vertical topography tolerance. Since there are many brand of slurry applicant widely in Oxide polishing, Tungsten polishing and Copper polishing. Hence, the behavior of surfactant in slurry is very important for us decide which surfactant and slurry is suit for us. One surfactant and two different types of slurry are evaluated in. this experiment. The planarity (dishing, step height remove...) is very good in this study. Defect is an important index for the technology beyond 0.15 /spl mu/m, the micro-scratch was studied in this experiment. Of course, we need evaluate the ability in mass production. The result is very satisfactory.
ISSN:1078-8743
2376-6697
DOI:10.1109/ASMC.2002.1001634