The influence of interfacial growth patterns on the transmission of electrons through nonabrupt GaAs/AlxGa1−xAs double-barriers

It is investigated how the interfacial growth pattern changes the transmission properties of graded GaAs/AlxGa1−xAs double-barriers. Five interfacial growth patterns are studied, all of them representative of interfacial alloy variations that can be the result of different growth techniques and grow...

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Bibliographic Details
Published in:Microelectronic engineering 1998-08, Vol.43-44, p.371-375
Main Authors: Lima, Maria Consuelo A, Farias, Gil A, Freire, Valder N
Format: Article
Language:English
Subjects:
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Design. Technologies. Operation analysis. Testing
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronics
Exact sciences and technology
GaAs/AlxGa1−xAs double barriers
Iii-v semiconductors
Integrated circuits
Interfacial patterns
Nonabrupt interfaces
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transmission properties
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Summary:It is investigated how the interfacial growth pattern changes the transmission properties of graded GaAs/AlxGa1−xAs double-barriers. Five interfacial growth patterns are studied, all of them representative of interfacial alloy variations that can be the result of different growth techniques and growth conditions of the interfaces. It is shown that the transmission resonances are shifted toward low energies in comparison to those of an abrupt GaAs/AlxGa1−xAs double-barriers. The shift increases with the interface width and with the order of the resonance, and depends on the type of growth pattern.
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(98)00187-7