An investigation of GaSb/GaAs thermophotovoltaic cells

The effect of growth conditions on the electrical and optical properties of p-GaSb/n-GaAs junctions grown by MOVPE has been studied. Low growth temperature (540/spl deg/C), HCI treatment of the GaAs substrate prior to growth and addition of a 100nm InAs passivation layer were all found to increase t...

Full description

Saved in:
Bibliographic Details
Main Authors: Fan, Q., Lim, A.L.C., Conibeer, G.J., Bumby, C.W., Shields, P.A., Nicholas, R.J., Haywood, S.K.
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Diodes
Energy
Epitaxial growth
Epitaxial layers
Exact sciences and technology
Gallium arsenide
Human computer interaction
Lighting
Natural energy
Optical buffering
Passivation
Short circuit currents
Solar energy
Temperature
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The effect of growth conditions on the electrical and optical properties of p-GaSb/n-GaAs junctions grown by MOVPE has been studied. Low growth temperature (540/spl deg/C), HCI treatment of the GaAs substrate prior to growth and addition of a 100nm InAs passivation layer were all found to increase the short circuit current (1/sub sc/) under illumination and also the spectral response from the GaSb layer. An undoped GaAs buffer increased the open circuit V/sub /spl prop// and improved the diode rectification but at the expense of photocurrent from the GaSb layer. Preliminary results suggest that n-doping the GaAs buffer layer may yield both high V/sub /spl prop// and high current collection.
ISSN:1060-8371
DOI:10.1109/PVSC.2002.1190755