Highly manufacturable 32Mb ULP-SRAM technology by using dual gate process for 1.5V Vcc operation

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Bibliographic Details
Main Authors: KIM, D. H, KIM, S. J, JOO, J. Y, KIM, J. H, KOH, K, PARK, S. H, HONG, J. I, HWANG, B. J, SEO, S. H, CHOI, J. H, LEE, H. S, YANG, W. S, KIM, M. S, KWAK, K. H, LEE, J. Y
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Design. Technologies. Operation analysis. Testing
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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DOI:10.1109/VLSIT.2002.1015416