Effect of in-situ nitrogen doping into MOCVD-grown Al2O3 to improve electrical characteristics of MOSFETs with polysilicon gate

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Bibliographic Details
Main Authors: TANIDA, Y, TAMURA, Y, MIYAGAKI, S, YAMAGUCHI, M, YOSHIDA, C, SUGIYAMA, Y, TANAKA, H
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Compound structure devices
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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DOI:10.1109/VLSIT.2002.1015447