An analog baseband chain for a UMTS zero-IF receiver in a 75 GHz SiGe BiCMOS technology

A zero-IF receiver for UMTS realized by using an advanced 0.35 /spl mu/m SiGe BiCMOS process with 75 GHz transit frequency is presented. The focal point is the analog baseband chain consisting of a low-noise buffer (LNB), a fully integrated channel selection filter, programmable gain amplifiers (PGA...

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Bibliographic Details
Main Authors: Schelmbauer, W., Pretl, H., Maurer, L., Adler, B., Weigel, R., Hagelauer, R., Fenk, J.
Format: Conference Proceeding
Language:English
Subjects:
3G mobile communication
Amplifiers
Applied sciences
Baseband
BiCMOS integrated circuits
Circuit properties
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Electronics packaging
Equipments and installations
Exact sciences and technology
Filters
Frequency
Germanium silicon alloys
Low-noise amplifiers
Mobile radiocommunication systems
Radiocommunications
Silicon germanium
Telecommunications
Telecommunications and information theory
Transmitters. Receivers
Voltage
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Description
Summary:A zero-IF receiver for UMTS realized by using an advanced 0.35 /spl mu/m SiGe BiCMOS process with 75 GHz transit frequency is presented. The focal point is the analog baseband chain consisting of a low-noise buffer (LNB), a fully integrated channel selection filter, programmable gain amplifiers (PGA) and circuits to reduce the effects of DC-offsets. The whole chain is able to provide a voltage gain from -14 dB up to 50 dB in 1 dB steps and 43 dB adjacent channel selectivity. The total receiver current consumption for a supply voltage of 2.7 V is less than 45 mA, whereby the baseband chain consumes 15 mA.
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2002.1012046