Characteristics of an InP-InGaAs-InGaAsP HBT

The dc characteristics of an interesting heterojunction bipolar transistor with an InGaAs-InGaAsP composite-collector structure are studied and reported. Due to the insertion of an InGaAsP setback layer at the base-emitter heterojunction, the potential spikes as well as the electron blocking effect...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2004-11, Vol.51 (11), p.1935-1938
Main Authors: CHEN, Jing-Yuh, CHENG, Shiou-Ying, CHEN, Chun-Yuan, LEE, Kuan-Ming, YEN, Chih-Hung, FU, Ssu-Yi, TSAI, Sheng-Fu, LIU, Wen-Chau
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Gallium materials/devices
Heterojunction bipolar transistors
Indium compounds
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Summary:The dc characteristics of an interesting heterojunction bipolar transistor with an InGaAs-InGaAsP composite-collector structure are studied and reported. Due to the insertion of an InGaAsP setback layer at the base-emitter heterojunction, the potential spikes as well as the electron blocking effect are suppressed significantly. In addition, the presence of an effective base-collector homojunction substantially reduces the current blocking effect. The studied device shows good dc performances including the small offset and saturation voltage without degrading the breakdown behavior. A typical dc current gain of 118 and the desired current amplification over 11 decades of the magnitude of collector current I/sub C/ are obtained.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2004.836549