Ultrahigh gain and non-radiative recombination channels in 1.5 μm range metamorphic InAs-InGaAs quantum dot lasers on GaAs substrates

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Bibliographic Details
Published in:Semiconductor science and technology 2005, Vol.20 (1), p.33-37
Main Authors: NOVIKOV, I. I, GORDEEV, N. Yu, ZAKHAROV, N. D, WERNER, P, MAXIMOV, M. V, SHERNYAKOV, Yu M, ZHUKOV, A. E, VASIL'EV, A. P, SEMENOVA, E. S, USTINOV, V. M, LEDENTSOV, N. N, BIMBERG, D
Format: Article
Language:eng ; rus
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/20/1/005