Degradation dynamics, recovery, and characterization of negative bias temperature instability: Negative-Bias-Temperature Instability (NBTI) in MOS devices special sectio n

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Bibliographic Details
Published in:Microelectronics and reliability 2005, Vol.45 (1), p.99-105
Main Authors: ERSHOV, M, SAXENA, S, MINEHANE, S, CLIFTON, P, REDFORD, M, LINDLEY, R, KARBASI, H, GRAVES, S, WINTERS, S
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
Online Access:Get full text
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ISSN:0026-2714