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Degradation dynamics, recovery, and characterization of negative bias temperature instability: Negative-Bias-Temperature Instability (NBTI) in MOS devices special sectio n
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| Published in: | Microelectronics and reliability 2005, Vol.45 (1), p.99-105 |
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| Main Authors: | , , , , , , , , |
| Format: | Article |
| Language: | English |
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| Online Access: | Get full text |
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| container_end_page | 105 |
| container_issue | 1 |
| container_start_page | 99 |
| container_title | Microelectronics and reliability |
| container_volume | 45 |
| creator | ERSHOV, M SAXENA, S MINEHANE, S CLIFTON, P REDFORD, M LINDLEY, R KARBASI, H GRAVES, S WINTERS, S |
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| format | article |
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| fulltext | fulltext |
| identifier | ISSN: 0026-2714 |
| ispartof | Microelectronics and reliability, 2005, Vol.45 (1), p.99-105 |
| issn | 0026-2714 |
| language | eng |
| recordid | cdi_pascalfrancis_primary_16404643 |
| source | ScienceDirect Freedom Collection |
| subjects | Applied sciences Electronics Exact sciences and technology Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Transistors |
| title | Degradation dynamics, recovery, and characterization of negative bias temperature instability: Negative-Bias-Temperature Instability (NBTI) in MOS devices special sectio n |
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