30-100-GHz inductors and transformers for millimeter-wave (Bi)CMOS integrated circuits

• Published in: IEEE transactions on microwave theory and techniques 2005-01, Vol.53 (1), p.123-133
• Main Authors: Dickson, T.O., LaCroix, M.-A., Boret, S., Gloria, D., Beerkens, R., Voinigescu, S.P.
• Format: Article
• Language: English
• Subjects: Applied sciences; Automotive engineering; Circuit properties; Circuits; Electric, optical and optoelectronic circuits; Electronics; Exact sciences and technology; Frequency; Inductors; Mathematical models; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits; millimeter wave; Millimeter wave integrated circuits; Millimeter wave radar; Millimeter wave technology; mixer; self-resonance frequency (SRF); Silicon; Silicon germanides; Spirals; stacked inductors; Transformers; voltage-controlled oscillator (VCO); Wireless communication; Wireless LAN
• ISSN: 0018-9480; 1557-9670
• DOI: 10.1109/TMTT.2004.839329

Silicon planar and three-dimensional inductors and transformers were designed and characterized on-wafer up to 100 GHz. Self-resonance frequencies (SRFs) beyond 100 GHz were obtained, demonstrating for the first time that spiral structures are suitable for applications such as 60-GHz wireless local area network and 77-GHz automotive RADAR. Minimizing area over substrate is critical to achieving high SRF. A stacked transformer is reported with S/sub 21/ of -2.5 dB at 50 GHz, and which offers improved performance and less area (30 /spl mu/m/spl times/30 /spl mu/m) than planar transformers or microstrip couplers. A compact inductor model is described, along with a methodology for extracting model parameters from simulated or measured y-parameters. Millimeter-wave SiGe BiCMOS mixer and voltage-controlled-oscillator circuits employing spiral inductors are presented with better or comparable performance to previously reported transmission-line-based circuits.