Anomalous differential resistance change at the oscillation threshold in quantum-well laser diodes

Anomalous behavior is investigated of differential resistance dU/dI of laser diodes at the lasing threshold. The regular case is the known decrease of the dU/dI associated with a dynamic saturation of the junction voltage. In contrast to this, the anomalous case is an increase of the differential re...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 2005-01, Vol.41 (1), p.9-14
Main Authors: Eliseev, P.G., Adamiec, P., Bercha, A., Dybala, F., Bohdan, R., Trzeciakowski, W.A.
Format: Article
Language:English
Subjects:
Conductivity
Differential resistance
Diode lasers
Electric resistance
Exact sciences and technology
Fundamental areas of phenomenology (including applications)
Laser modes
Lasers
Optics
Physics
pressure and temperature effects
Pump lasers
Quantum well lasers
Semiconductor diodes
Semiconductor lasers
Semiconductor lasers
laser diodes
Temperature
Voltage
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Summary:Anomalous behavior is investigated of differential resistance dU/dI of laser diodes at the lasing threshold. The regular case is the known decrease of the dU/dI associated with a dynamic saturation of the junction voltage. In contrast to this, the anomalous case is an increase of the differential resistance (the "positive kink" of dU/dI). Some regular samples are found to show the anomaly at lower temperature or at high hydrostatic pressure. The anomaly is discussed in terms of the injection-induced conductivity.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.2004.839237