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A dual-core 64-bit ultraSPARC microprocessor for dense server applications
A dual-core 64-bit microprocessor optimized for compute-dense systems such as rack-mount and blade servers for network computing was developed. The chip consists of two UltraSPARC II cores, each with its own 512 kB L2 cache, a DDR-1 memory controller, and symmetric multiprocessor bus (JBus) controll...
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Published in: | IEEE journal of solid-state circuits 2005-01, Vol.40 (1), p.7-18 |
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creator | Takayanagi, T. Shin, J.L. Petrick, B. Su, J.Y. Levy, H. Ha Pham Son, J. Moon, N. Bistry, D. Nair, U. Singh, M. Mathur, V. Leon, A.S. |
description | A dual-core 64-bit microprocessor optimized for compute-dense systems such as rack-mount and blade servers for network computing was developed. The chip consists of two UltraSPARC II cores, each with its own 512 kB L2 cache, a DDR-1 memory controller, and symmetric multiprocessor bus (JBus) controllers. The 206-mm/sup 2/ die is fabricated in 0.13-/spl mu/m CMOS technology with seven layers of Cu and a low-k dielectric. The chip offers a highly efficient performance-per-watt ratio with a typical power dissipation of 23 W at 1.3 V and 1.2 GHz. A short design cycle was achieved by leveraging existing designs wherever possible and developing effective design methodologies and flows. Significant design challenges faced by this project are described. These include deep-submicron design issues, such as negative bias temperature instability (NBTI), leakage, coupling noise, intra-die process variation, and electromigration (EM). A second important design challenge was implementing a high-performance L2 cache subsystem with a short four-cycle core-to-L2 latency including ECC. |
doi_str_mv | 10.1109/JSSC.2004.838023 |
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The chip consists of two UltraSPARC II cores, each with its own 512 kB L2 cache, a DDR-1 memory controller, and symmetric multiprocessor bus (JBus) controllers. The 206-mm/sup 2/ die is fabricated in 0.13-/spl mu/m CMOS technology with seven layers of Cu and a low-k dielectric. The chip offers a highly efficient performance-per-watt ratio with a typical power dissipation of 23 W at 1.3 V and 1.2 GHz. A short design cycle was achieved by leveraging existing designs wherever possible and developing effective design methodologies and flows. Significant design challenges faced by this project are described. These include deep-submicron design issues, such as negative bias temperature instability (NBTI), leakage, coupling noise, intra-die process variation, and electromigration (EM). A second important design challenge was implementing a high-performance L2 cache subsystem with a short four-cycle core-to-L2 latency including ECC.</description><identifier>ISSN: 0018-9200</identifier><identifier>EISSN: 1558-173X</identifier><identifier>DOI: 10.1109/JSSC.2004.838023</identifier><identifier>CODEN: IJSCBC</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Amplifiers ; Applied sciences ; Blades ; Buses (vehicles) ; Chip Multithreading (CMT) ; Circuit properties ; CMOS technology ; Computer networks ; coupling noise ; current-mode sense amplifier ; deep-submicron technology ; dense server ; Design engineering ; Design methodology ; Design. Technologies. Operation analysis. Testing ; Dielectrics ; dual-core ; ECC ; Electric, optical and optoelectronic circuits ; electromigration ; Electronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Exact sciences and technology ; hold time ; Instability ; Integrated circuits ; Integrated circuits by function (including memories and processors) ; L2 Cache ; Leakage ; microprocessor ; Microprocessors ; multicore ; multiprocessor ; multithread ; Negative bias temperature instability ; negative bias temperature instability (NBTI) ; Network servers ; Networks ; Niobium compounds ; Power dissipation ; process variation ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Semiconductors ; Servers ; thread-level parallelism (TLP) ; translation look aside buffer (TLB) ; UltraSPARC</subject><ispartof>IEEE journal of solid-state circuits, 2005-01, Vol.40 (1), p.7-18</ispartof><rights>2005 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The chip consists of two UltraSPARC II cores, each with its own 512 kB L2 cache, a DDR-1 memory controller, and symmetric multiprocessor bus (JBus) controllers. The 206-mm/sup 2/ die is fabricated in 0.13-/spl mu/m CMOS technology with seven layers of Cu and a low-k dielectric. The chip offers a highly efficient performance-per-watt ratio with a typical power dissipation of 23 W at 1.3 V and 1.2 GHz. A short design cycle was achieved by leveraging existing designs wherever possible and developing effective design methodologies and flows. Significant design challenges faced by this project are described. These include deep-submicron design issues, such as negative bias temperature instability (NBTI), leakage, coupling noise, intra-die process variation, and electromigration (EM). A second important design challenge was implementing a high-performance L2 cache subsystem with a short four-cycle core-to-L2 latency including ECC.</description><subject>Amplifiers</subject><subject>Applied sciences</subject><subject>Blades</subject><subject>Buses (vehicles)</subject><subject>Chip Multithreading (CMT)</subject><subject>Circuit properties</subject><subject>CMOS technology</subject><subject>Computer networks</subject><subject>coupling noise</subject><subject>current-mode sense amplifier</subject><subject>deep-submicron technology</subject><subject>dense server</subject><subject>Design engineering</subject><subject>Design methodology</subject><subject>Design. Technologies. Operation analysis. Testing</subject><subject>Dielectrics</subject><subject>dual-core</subject><subject>ECC</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>electromigration</subject><subject>Electronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>hold time</subject><subject>Instability</subject><subject>Integrated circuits</subject><subject>Integrated circuits by function (including memories and processors)</subject><subject>L2 Cache</subject><subject>Leakage</subject><subject>microprocessor</subject><subject>Microprocessors</subject><subject>multicore</subject><subject>multiprocessor</subject><subject>multithread</subject><subject>Negative bias temperature instability</subject><subject>negative bias temperature instability (NBTI)</subject><subject>Network servers</subject><subject>Networks</subject><subject>Niobium compounds</subject><subject>Power dissipation</subject><subject>process variation</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Semiconductors</subject><subject>Servers</subject><subject>thread-level parallelism (TLP)</subject><subject>translation look aside buffer (TLB)</subject><subject>UltraSPARC</subject><issn>0018-9200</issn><issn>1558-173X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNp9kU1rGzEQhkVoIG7SeyCXpdD0tI5mtfo6miVpYgwpdQO5CVkawZr1rivtFvLvK2NDoIcchBDvM8OMHkKugc4BqL5brtfNvKK0niumaMXOyAw4VyVI9vqJzCgFVeqcX5DPKW3zs64VzMhyUfjJdqUbIhaiLjftWEzdGO365-JXU-xaF4d9HBymNMQi5OOxT1gkjH8xFna_71pnx3bo0xU5D7ZL-OV0X5KXh_vfzWO5ev7x1CxWpau0GsugqAXplLeei40Ay2vu_YZL5h16XgUISB1wCJ5SlFZaoQVKELDxdUBkl-T7sW-e68-EaTS7NjnsOtvjMCWjtKgqDkxm8vZDslKUcq2qDH79D9wOU-zzFkYDaEUFExmiRyh_SUoRg9nHdmfjmwFqDg7MwYE5ODBHB7nk26mvTc52Idretem9TtRSZA-ZuzlyLSK-x0zWWnH2D4vIjuU</recordid><startdate>200501</startdate><enddate>200501</enddate><creator>Takayanagi, T.</creator><creator>Shin, J.L.</creator><creator>Petrick, B.</creator><creator>Su, J.Y.</creator><creator>Levy, H.</creator><creator>Ha Pham</creator><creator>Son, J.</creator><creator>Moon, N.</creator><creator>Bistry, D.</creator><creator>Nair, U.</creator><creator>Singh, M.</creator><creator>Mathur, V.</creator><creator>Leon, A.S.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Technologies. Operation analysis. Testing</topic><topic>Dielectrics</topic><topic>dual-core</topic><topic>ECC</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>electromigration</topic><topic>Electronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>hold time</topic><topic>Instability</topic><topic>Integrated circuits</topic><topic>Integrated circuits by function (including memories and processors)</topic><topic>L2 Cache</topic><topic>Leakage</topic><topic>microprocessor</topic><topic>Microprocessors</topic><topic>multicore</topic><topic>multiprocessor</topic><topic>multithread</topic><topic>Negative bias temperature instability</topic><topic>negative bias temperature instability (NBTI)</topic><topic>Network servers</topic><topic>Networks</topic><topic>Niobium compounds</topic><topic>Power dissipation</topic><topic>process variation</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. 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The chip consists of two UltraSPARC II cores, each with its own 512 kB L2 cache, a DDR-1 memory controller, and symmetric multiprocessor bus (JBus) controllers. The 206-mm/sup 2/ die is fabricated in 0.13-/spl mu/m CMOS technology with seven layers of Cu and a low-k dielectric. The chip offers a highly efficient performance-per-watt ratio with a typical power dissipation of 23 W at 1.3 V and 1.2 GHz. A short design cycle was achieved by leveraging existing designs wherever possible and developing effective design methodologies and flows. Significant design challenges faced by this project are described. These include deep-submicron design issues, such as negative bias temperature instability (NBTI), leakage, coupling noise, intra-die process variation, and electromigration (EM). A second important design challenge was implementing a high-performance L2 cache subsystem with a short four-cycle core-to-L2 latency including ECC.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/JSSC.2004.838023</doi><tpages>12</tpages></addata></record> |
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subjects | Amplifiers Applied sciences Blades Buses (vehicles) Chip Multithreading (CMT) Circuit properties CMOS technology Computer networks coupling noise current-mode sense amplifier deep-submicron technology dense server Design engineering Design methodology Design. Technologies. Operation analysis. Testing Dielectrics dual-core ECC Electric, optical and optoelectronic circuits electromigration Electronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Exact sciences and technology hold time Instability Integrated circuits Integrated circuits by function (including memories and processors) L2 Cache Leakage microprocessor Microprocessors multicore multiprocessor multithread Negative bias temperature instability negative bias temperature instability (NBTI) Network servers Networks Niobium compounds Power dissipation process variation Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Semiconductors Servers thread-level parallelism (TLP) translation look aside buffer (TLB) UltraSPARC |
title | A dual-core 64-bit ultraSPARC microprocessor for dense server applications |
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