Efeects of MESA etching processes on GaInP/GaAs triple barrier resonant tunneling diodes

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Main Authors: SUHARA, M, ASAOKA, N, FUKUMITSU, M, HORIE, H, OKUMURA, T
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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creator SUHARA, M
ASAOKA, N
FUKUMITSU, M
HORIE, H
OKUMURA, T
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ispartof Proceedings - Electrochemical Society, 2004, p.96-102
issn 0161-6374
2576-1579
language eng
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source Institute of Physics
subjects Applied sciences
Diodes
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Molecular electronics, nanoelectronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
title Efeects of MESA etching processes on GaInP/GaAs triple barrier resonant tunneling diodes
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