Silicon oxynitride gate-dielectric made by ECR plasma oxynitridation

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Bibliographic Details
Main Authors: MANERA, G. A, DINIZ, J. A, MOSHKALYOV, S. A, DOI, I, SWART, J. W
Format: Conference Proceeding
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Materials
Online Access:Get full text
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ISSN:0161-6374
2576-1579