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Shallow donor generation in ZnO by remote hydrogen plasma: Special issue on SiC and the group III nitride semiconductors
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| Published in: | Journal of electronic materials 2005, Vol.34 (4), p.399-403 |
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| Main Authors: | , , , , , , , , , , |
| Format: | Article |
| Language: | English |
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| container_end_page | 403 |
| container_issue | 4 |
| container_start_page | 399 |
| container_title | Journal of electronic materials |
| container_volume | 34 |
| creator | STRZHEMECHNY, Yuri M MOSBACKER, Howard L BRILLSON, Leonard J GOSS, Stephen H LOOK, David C REYNOLDS, Donald C LITTON, Cole W GARCES, Nelson Y GILES, Nancy C HALLIBURTON, Larry E NIKI, Shigeru |
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| format | article |
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| fulltext | fulltext |
| identifier | ISSN: 0361-5235 |
| ispartof | Journal of electronic materials, 2005, Vol.34 (4), p.399-403 |
| issn | 0361-5235 1543-186X |
| language | eng |
| recordid | cdi_pascalfrancis_primary_16772901 |
| source | Springer Nature |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Condensed matter: structure, mechanical and thermal properties Defects and impurities in crystals microstructure Doping and impurity implantation in iii-v and ii-vi semiconductors Exact sciences and technology Ii-vi semiconductors Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Photoluminescence Physics Structure of solids and liquids crystallography |
| title | Shallow donor generation in ZnO by remote hydrogen plasma: Special issue on SiC and the group III nitride semiconductors |
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