Effect of anisotropic material properties on the forward voltage drop in 6H- and 4H-SiC power diode structures

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Bibliographic Details
Published in:Semiconductor science and technology 1999-02, Vol.14 (2), p.125-129
Main Authors: Tornblad, O, Östling, M, Lindefelt, U, Breitholtz, B
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
NATURAL SCIENCES
NATURVETENSKAP
Other multijunction devices. Power transistors. Thyristors
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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ISSN:0268-1242
1361-6641
DOI:10.1088/0268-1242/14/2/004