High-gain cascode MMICs in coplanar technology at W-band frequencies

Compact high-gain W-band multistage amplifier MMICs have been developed in coplanar technology using 0.15 μm AlGaAs-InGaAs-GaAs PM-HEMTs. The conventional dual-gate HEMT has been modified to include an additional interstage network between the common-source and the common-gate HEMT. The effect of st...

Full description

Saved in:
Bibliographic Details
Published in:IEEE microwave and guided wave letters 1998-12, Vol.8 (12), p.430-431
Main Authors: Tessmann, A., Haydl, W.H., Hulsmann, A., Schlechtweg, M.
Format: Article
Language:English
Subjects:
Applied sciences
Capacitance
Circuit properties
Circuits
Distributed amplifiers
Electric, optical and optoelectronic circuits
Electronics
Exact sciences and technology
Feedback
Field effect MMICs
Frequency
Gallium arsenide
HEMTs
Indium gallium arsenide
Low-noise amplifiers
Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Compact high-gain W-band multistage amplifier MMICs have been developed in coplanar technology using 0.15 μm AlGaAs-InGaAs-GaAs PM-HEMTs. The conventional dual-gate HEMT has been modified to include an additional interstage network between the common-source and the common-gate HEMT. The effect of stabilizing circuit elements has been investigated. A gain of 10 dB per cascode stage is obtained at 94 GHz. Multistage amplifier MMIC's with up to 40 dB gain have been realized.
ISSN:1051-8207
1558-2329
DOI:10.1109/75.746765