Loading…

Novel integration concepts for sige-based RF-MOSFETs

Saved in:
Bibliographic Details
Main Authors: ÖSTLING, Mikael, MALM, B. G, HELLSTRÖM, P.-E, RADAMSON, H. H, ISHEDEN, C, SEGER, J, VON HAARTMAN, M, ZHANG, S.-L
Format: Conference Proceeding
Language:English
Subjects:
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by
cites
container_end_page 284
container_issue
container_start_page 270
container_title
container_volume
creator ÖSTLING, Mikael
MALM, B. G
HELLSTRÖM, P.-E
RADAMSON, H. H
ISHEDEN, C
SEGER, J
VON HAARTMAN, M
ZHANG, S.-L
description
format conference_proceeding
fullrecord <record><control><sourceid>pascalfrancis</sourceid><recordid>TN_cdi_pascalfrancis_primary_17162433</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>17162433</sourcerecordid><originalsourceid>FETCH-pascalfrancis_primary_171624333</originalsourceid><addsrcrecordid>eNqNyrsKwjAUgOHgBazad8jiGMhpbnQWi4sK6l5iTUukJiWnCL69Dj6A0w8f_4RkhTKagTLllCxBaW2M1JLPSMZBA9PCyAXJER-c80KAglJmRB7jy_XUh9F1yY4-BtrE0LhhRNrGRNF3jt0sujs9V-xwulS7K67JvLU9uvzXFdl8ebtng8XG9m2yofFYD8k_bXrXYEAXUgjx7_cB83o50g</addsrcrecordid><sourcetype>Index Database</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Novel integration concepts for sige-based RF-MOSFETs</title><source>IOPscience journals</source><creator>ÖSTLING, Mikael ; MALM, B. G ; HELLSTRÖM, P.-E ; RADAMSON, H. H ; ISHEDEN, C ; SEGER, J ; VON HAARTMAN, M ; ZHANG, S.-L</creator><creatorcontrib>ÖSTLING, Mikael ; MALM, B. G ; HELLSTRÖM, P.-E ; RADAMSON, H. H ; ISHEDEN, C ; SEGER, J ; VON HAARTMAN, M ; ZHANG, S.-L</creatorcontrib><identifier>ISSN: 0161-6374</identifier><identifier>ISBN: 1566774640</identifier><identifier>ISBN: 9781566774642</identifier><identifier>EISSN: 2576-1579</identifier><language>eng</language><publisher>Pennington NJ: Electrochemical Society</publisher><subject>Applied sciences ; Electronics ; Exact sciences and technology ; Microelectronic fabrication (materials and surfaces technology) ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Transistors</subject><ispartof>Proceedings - Electrochemical Society, 2005, p.270-284</ispartof><rights>2005 INIST-CNRS</rights><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>309,310,776,780,785,786,4035,4036,23910,23911,25119</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&amp;idt=17162433$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>ÖSTLING, Mikael</creatorcontrib><creatorcontrib>MALM, B. G</creatorcontrib><creatorcontrib>HELLSTRÖM, P.-E</creatorcontrib><creatorcontrib>RADAMSON, H. H</creatorcontrib><creatorcontrib>ISHEDEN, C</creatorcontrib><creatorcontrib>SEGER, J</creatorcontrib><creatorcontrib>VON HAARTMAN, M</creatorcontrib><creatorcontrib>ZHANG, S.-L</creatorcontrib><title>Novel integration concepts for sige-based RF-MOSFETs</title><title>Proceedings - Electrochemical Society</title><subject>Applied sciences</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Microelectronic fabrication (materials and surfaces technology)</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Transistors</subject><issn>0161-6374</issn><issn>2576-1579</issn><isbn>1566774640</isbn><isbn>9781566774642</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2005</creationdate><recordtype>conference_proceeding</recordtype><recordid>eNqNyrsKwjAUgOHgBazad8jiGMhpbnQWi4sK6l5iTUukJiWnCL69Dj6A0w8f_4RkhTKagTLllCxBaW2M1JLPSMZBA9PCyAXJER-c80KAglJmRB7jy_XUh9F1yY4-BtrE0LhhRNrGRNF3jt0sujs9V-xwulS7K67JvLU9uvzXFdl8ebtng8XG9m2yofFYD8k_bXrXYEAXUgjx7_cB83o50g</recordid><startdate>2005</startdate><enddate>2005</enddate><creator>ÖSTLING, Mikael</creator><creator>MALM, B. G</creator><creator>HELLSTRÖM, P.-E</creator><creator>RADAMSON, H. H</creator><creator>ISHEDEN, C</creator><creator>SEGER, J</creator><creator>VON HAARTMAN, M</creator><creator>ZHANG, S.-L</creator><general>Electrochemical Society</general><scope>IQODW</scope></search><sort><creationdate>2005</creationdate><title>Novel integration concepts for sige-based RF-MOSFETs</title><author>ÖSTLING, Mikael ; MALM, B. G ; HELLSTRÖM, P.-E ; RADAMSON, H. H ; ISHEDEN, C ; SEGER, J ; VON HAARTMAN, M ; ZHANG, S.-L</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-pascalfrancis_primary_171624333</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Microelectronic fabrication (materials and surfaces technology)</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Transistors</topic><toplevel>online_resources</toplevel><creatorcontrib>ÖSTLING, Mikael</creatorcontrib><creatorcontrib>MALM, B. G</creatorcontrib><creatorcontrib>HELLSTRÖM, P.-E</creatorcontrib><creatorcontrib>RADAMSON, H. H</creatorcontrib><creatorcontrib>ISHEDEN, C</creatorcontrib><creatorcontrib>SEGER, J</creatorcontrib><creatorcontrib>VON HAARTMAN, M</creatorcontrib><creatorcontrib>ZHANG, S.-L</creatorcontrib><collection>Pascal-Francis</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>ÖSTLING, Mikael</au><au>MALM, B. G</au><au>HELLSTRÖM, P.-E</au><au>RADAMSON, H. H</au><au>ISHEDEN, C</au><au>SEGER, J</au><au>VON HAARTMAN, M</au><au>ZHANG, S.-L</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Novel integration concepts for sige-based RF-MOSFETs</atitle><btitle>Proceedings - Electrochemical Society</btitle><date>2005</date><risdate>2005</risdate><spage>270</spage><epage>284</epage><pages>270-284</pages><issn>0161-6374</issn><eissn>2576-1579</eissn><isbn>1566774640</isbn><isbn>9781566774642</isbn><cop>Pennington NJ</cop><pub>Electrochemical Society</pub></addata></record>
fulltext fulltext
identifier ISSN: 0161-6374
ispartof Proceedings - Electrochemical Society, 2005, p.270-284
issn 0161-6374
2576-1579
language eng
recordid cdi_pascalfrancis_primary_17162433
source IOPscience journals
subjects Applied sciences
Electronics
Exact sciences and technology
Microelectronic fabrication (materials and surfaces technology)
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
title Novel integration concepts for sige-based RF-MOSFETs
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T14%3A42%3A01IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pascalfrancis&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Novel%20integration%20concepts%20for%20sige-based%20RF-MOSFETs&rft.btitle=Proceedings%20-%20Electrochemical%20Society&rft.au=%C3%96STLING,%20Mikael&rft.date=2005&rft.spage=270&rft.epage=284&rft.pages=270-284&rft.issn=0161-6374&rft.eissn=2576-1579&rft.isbn=1566774640&rft.isbn_list=9781566774642&rft_id=info:doi/&rft_dat=%3Cpascalfrancis%3E17162433%3C/pascalfrancis%3E%3Cgrp_id%3Ecdi_FETCH-pascalfrancis_primary_171624333%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true