Physical insights regarding design and performance of independent-gate FinFETs

Important physical insights regarding the design and performance of independent-gate FinFETs, e.g., the MIGFET , are gained from measured data and predictions from our process/physics-based double-gate (DG) MOSFET model (UFDG) in Spice3. Inversion charge-centroid shifting, modulated by gate biases a...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2005-10, Vol.52 (10), p.2198-2206
Main Authors: Weimin Zhang, Fossum, J.G., Mathew, L., Yang Du
Format: Article
Language:English
Subjects:
Applied sciences
Circuit optimization
Circuit properties
Compound structure devices
Conversion
Devices
Digital circuits
Double-gate (DG) FinFET
Electric, optical and optoelectronic circuits
Electronic circuits
Electronics
Exact sciences and technology
Gain
Gates (circuits)
Insulated gate FETs
Inversions
Mixers
MOSFETs
multiple independent-gate FinFET (MIGFET)
Optimization
RF mixer
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Signal convertors
SPICE
threshold-voltage control
Transistors
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Summary:Important physical insights regarding the design and performance of independent-gate FinFETs, e.g., the MIGFET , are gained from measured data and predictions from our process/physics-based double-gate (DG) MOSFET model (UFDG) in Spice3. Inversion charge-centroid shifting, modulated by gate biases as well as by quantum-confinement and short-channel effects, underlies the sensitivity of the MIGFET (front-gate) threshold voltage to the back-gate bias. MIGFET design and operation-mode options are examined for optimizing circuit applications. Further, novel design of a single-device RF mixer and a double-balanced counterpart using MIGFETs is studied with UFDG/Spice3. Reasonably good MIGFET mixers, with regard to conversion gain and linearity with small-size/low-voltage/low-power requirements, can be achieved with optimal biases on the two gates and good design of the MIGFET structure.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.856184