Process and characteristics of modified Schottky barrier (MSB) p-channel FinFETs

A novel modified Schottky barrier p-channel FinFET (MSB FinFET) has been successfully demonstrated previously. In this paper, the detailed process conditions, especially the formation of MSB junctions, has been presented. Device characteristics as well as the geometry effect are also discussed exten...

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Bibliographic Details
Published in:IEEE transactions on electron devices 2005-11, Vol.52 (11), p.2455-2462
Main Authors: Bing-Yue Tsui, Lin, C.-P.
Format: Article
Language:English
Subjects:
Applied sciences
Barriers
Channels
Devices
Dielectric relaxation
Drains
Electrical junctions
Electronics
Exact sciences and technology
FinFET
Grain size
implant-to-silicide (ITS)
Molecular electronics, nanoelectronics
MOSFETs
Nanostructure
Schottky barrier (SB)
Schottky barriers
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicides
silicon-on-insulator (SOI)
Transistors
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Summary:A novel modified Schottky barrier p-channel FinFET (MSB FinFET) has been successfully demonstrated previously. In this paper, the detailed process conditions, especially the formation of MSB junctions, has been presented. Device characteristics as well as the geometry effect are also discussed extensively. In the MSB FinFETs fabricated by the two-step silicidation and implant-to-silicide techniques (ITS), an ultrashort and defect-free source/drain extension (SDE) could be formed at a temperature as low as 600/spl deg/C, resulting in excellent electrical characteristics. The ultrashort SDE could effectively thin out the SB width between source/channel during on-state or broaden and elevate it between drain/channel during off-state. A leakage mechanism of MSB FinFETs similar to the conventional ones was identified by the activation energy analysis. Strong fin width dependence of the electrical characteristics was also found in the proposed devices. When the fin width becomes larger than the silicide grain size, the multigrain structure results in a rough front edge of the MSB junction, which in turn degrades the short-channel device performance. This result indicates that the MSB device is suitable for use as FinFET. The low thermal budget of the MSB FinFET relaxes the thermal stability issue for metal gate/high-/spl kappa/ dielectric integration. It is considered that the proposed MSB FinFET is a very promising nanodevice.
ISSN:0018-9383
1557-9646
DOI:10.1109/TED.2005.857178