Switching of magnetostrictive micro-dot arrays by mechanical strain

This paper investigates the switching behavior of magnetostrictive micro-dot arrays by mechanical strain. These amorphous FeCoBSi micro-dot arrays with diameters of 1-5 /spl mu/m and a thickness of 20 nm have been prepared on MEMS fabricated membrane structures. Magnetic force microscopy (MFM) has b...

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Bibliographic Details
Published in:IEEE transactions on magnetics 2005-10, Vol.41 (10), p.3505-3507
Main Authors: Bootsmann, M.-T., Dokupil, S., Quandt, E., Ivanov, T., Abedinov, N.C., Lohndorf, M.
Format: Article
Language:English
Subjects:
Amorphous magnetic materials
Amorphous materials
Biomembranes
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Magnetic field induced strain
Magnetic force microscopy
Magnetic forces
Magnetic switching
Magnetism
Magnetostriction
Materials science
micro-fabrication
Micromechanical devices
Other topics in materials science
Physics
Spatial resolution
strain sensors
thin films
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Summary:This paper investigates the switching behavior of magnetostrictive micro-dot arrays by mechanical strain. These amorphous FeCoBSi micro-dot arrays with diameters of 1-5 /spl mu/m and a thickness of 20 nm have been prepared on MEMS fabricated membrane structures. Magnetic force microscopy (MFM) has been used to obtain a spatially resolved switching behavior of these dots at different level of mechanical strain. For 20-nm-thick FeCoBSi dots, we have observed a strain induced switching starting at a level of about 0.04% of strain. In addition, finite-element simulations have been performed in order to correlate the MFM results with the local strain distribution of the membrane structure.
ISSN:0018-9464
1941-0069
DOI:10.1109/TMAG.2005.854747