Very low noise RF nMOSFETs on plastic by substrate thinning and wafer transfer

A very low minimum noise figure (NF min ) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (/spl sim/30 μm) and wafer tran...

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Bibliographic Details
Published in:IEEE microwave and wireless components letters 2005-11, Vol.15 (11), p.757-759
Main Authors: Kao, H.L., Hung, B.F., Chin, A., Lai, J.M., Lee, C.F., McAlister, S.P., Chi, C.C.
Format: Article
Language:English
Subjects:
Applied sciences
Associated gain
Electronics
Exact sciences and technology
Frequency measurement
Gain measurement
metal-oxide semiconductor field-effect transistor (MOSFET)
Microwave and submillimeter wave devices, electron transfer devices
minimum noise figure
MOS devices
MOSFETs
Noise figure
Noise measurement
plastic
Plastics
Radio frequency
radio frequency (RF)
Semiconductor device noise
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Substrates
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Summary:A very low minimum noise figure (NF min ) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (/spl sim/30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB NF min and a 13.7-dB associated gain. The small RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.
ISSN:1531-1309
2771-957X
1558-1764
2771-9588
DOI:10.1109/LMWC.2005.858999