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Very low noise RF nMOSFETs on plastic by substrate thinning and wafer transfer
A very low minimum noise figure (NF min ) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (/spl sim/30 μm) and wafer tran...
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| Published in: | IEEE microwave and wireless components letters 2005-11, Vol.15 (11), p.757-759 |
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| Main Authors: | , , , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c2618-2c9e3a752c25aec7b1c6b08df04b90d401bd8ce9e287aa3b7e453e7e5b183e353 |
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| cites | cdi_FETCH-LOGICAL-c2618-2c9e3a752c25aec7b1c6b08df04b90d401bd8ce9e287aa3b7e453e7e5b183e353 |
| container_end_page | 759 |
| container_issue | 11 |
| container_start_page | 757 |
| container_title | IEEE microwave and wireless components letters |
| container_volume | 15 |
| creator | Kao, H.L. Hung, B.F. Chin, A. Lai, J.M. Lee, C.F. McAlister, S.P. Chi, C.C. |
| description | A very low minimum noise figure (NF min ) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (/spl sim/30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB NF min and a 13.7-dB associated gain. The small RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic. |
| doi_str_mv | 10.1109/LMWC.2005.858999 |
| format | article |
| fullrecord | <record><control><sourceid>proquest_pasca</sourceid><recordid>TN_cdi_pascalfrancis_primary_17254860</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>1525065</ieee_id><sourcerecordid>28122788</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2618-2c9e3a752c25aec7b1c6b08df04b90d401bd8ce9e287aa3b7e453e7e5b183e353</originalsourceid><addsrcrecordid>eNpdkN9LwzAQx4MoOKfvgi9B0LfOJG3a5FGGU2Fz4M_HkKZX7ejSmbSM_femdDDw6Q6-n_ve3RehS0omlBJ5N198TSeMED4RXEgpj9CIci4imqXJcd_HNKIxkafozPsVITQRCR2hl09wO1w3W2ybygN-nWG7WL7NHt49bize1Nq3lcH5Dvsu963TLeD2p7K2st9Y2wJvdQkOB8H60Jyjk1LXHi72dYw-gtX0KZovH5-n9_PIsJSKiBkJsc44M4xrMFlOTZoTUZQkySUpEkLzQhiQwESmdZxnkPAYMuA5FTHEPB6j28F345rfDnyr1pU3UNfaQtN5xQRlLBMigNf_wFXTORtuU0FNGONp70YGyLjGewel2rhqrd1OUaL6dFWfrurTVUO6YeRm76u90XUZ_jeVP8xljCciJYG7GrgKAA4yZ5yExX8uzIHX</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>883422565</pqid></control><display><type>article</type><title>Very low noise RF nMOSFETs on plastic by substrate thinning and wafer transfer</title><source>IEEE Xplore (Online service)</source><creator>Kao, H.L. ; Hung, B.F. ; Chin, A. ; Lai, J.M. ; Lee, C.F. ; McAlister, S.P. ; Chi, C.C.</creator><creatorcontrib>Kao, H.L. ; Hung, B.F. ; Chin, A. ; Lai, J.M. ; Lee, C.F. ; McAlister, S.P. ; Chi, C.C.</creatorcontrib><description>A very low minimum noise figure (NF min ) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (/spl sim/30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB NF min and a 13.7-dB associated gain. The small RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.</description><identifier>ISSN: 1531-1309</identifier><identifier>ISSN: 2771-957X</identifier><identifier>EISSN: 1558-1764</identifier><identifier>EISSN: 2771-9588</identifier><identifier>DOI: 10.1109/LMWC.2005.858999</identifier><identifier>CODEN: IMWCBJ</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Associated gain ; Electronics ; Exact sciences and technology ; Frequency measurement ; Gain measurement ; metal-oxide semiconductor field-effect transistor (MOSFET) ; Microwave and submillimeter wave devices, electron transfer devices ; minimum noise figure ; MOS devices ; MOSFETs ; Noise figure ; Noise measurement ; plastic ; Plastics ; Radio frequency ; radio frequency (RF) ; Semiconductor device noise ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; Substrates</subject><ispartof>IEEE microwave and wireless components letters, 2005-11, Vol.15 (11), p.757-759</ispartof><rights>2006 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2005</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2618-2c9e3a752c25aec7b1c6b08df04b90d401bd8ce9e287aa3b7e453e7e5b183e353</citedby><cites>FETCH-LOGICAL-c2618-2c9e3a752c25aec7b1c6b08df04b90d401bd8ce9e287aa3b7e453e7e5b183e353</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/1525065$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,776,780,27903,27904,54775</link.rule.ids><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=17254860$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Kao, H.L.</creatorcontrib><creatorcontrib>Hung, B.F.</creatorcontrib><creatorcontrib>Chin, A.</creatorcontrib><creatorcontrib>Lai, J.M.</creatorcontrib><creatorcontrib>Lee, C.F.</creatorcontrib><creatorcontrib>McAlister, S.P.</creatorcontrib><creatorcontrib>Chi, C.C.</creatorcontrib><title>Very low noise RF nMOSFETs on plastic by substrate thinning and wafer transfer</title><title>IEEE microwave and wireless components letters</title><addtitle>LMWC</addtitle><description>A very low minimum noise figure (NF min ) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (/spl sim/30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB NF min and a 13.7-dB associated gain. The small RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.</description><subject>Applied sciences</subject><subject>Associated gain</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>Frequency measurement</subject><subject>Gain measurement</subject><subject>metal-oxide semiconductor field-effect transistor (MOSFET)</subject><subject>Microwave and submillimeter wave devices, electron transfer devices</subject><subject>minimum noise figure</subject><subject>MOS devices</subject><subject>MOSFETs</subject><subject>Noise figure</subject><subject>Noise measurement</subject><subject>plastic</subject><subject>Plastics</subject><subject>Radio frequency</subject><subject>radio frequency (RF)</subject><subject>Semiconductor device noise</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>Substrates</subject><issn>1531-1309</issn><issn>2771-957X</issn><issn>1558-1764</issn><issn>2771-9588</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2005</creationdate><recordtype>article</recordtype><recordid>eNpdkN9LwzAQx4MoOKfvgi9B0LfOJG3a5FGGU2Fz4M_HkKZX7ejSmbSM_femdDDw6Q6-n_ve3RehS0omlBJ5N198TSeMED4RXEgpj9CIci4imqXJcd_HNKIxkafozPsVITQRCR2hl09wO1w3W2ybygN-nWG7WL7NHt49bize1Nq3lcH5Dvsu963TLeD2p7K2st9Y2wJvdQkOB8H60Jyjk1LXHi72dYw-gtX0KZovH5-n9_PIsJSKiBkJsc44M4xrMFlOTZoTUZQkySUpEkLzQhiQwESmdZxnkPAYMuA5FTHEPB6j28F345rfDnyr1pU3UNfaQtN5xQRlLBMigNf_wFXTORtuU0FNGONp70YGyLjGewel2rhqrd1OUaL6dFWfrurTVUO6YeRm76u90XUZ_jeVP8xljCciJYG7GrgKAA4yZ5yExX8uzIHX</recordid><startdate>20051101</startdate><enddate>20051101</enddate><creator>Kao, H.L.</creator><creator>Hung, B.F.</creator><creator>Chin, A.</creator><creator>Lai, J.M.</creator><creator>Lee, C.F.</creator><creator>McAlister, S.P.</creator><creator>Chi, C.C.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>7U5</scope></search><sort><creationdate>20051101</creationdate><title>Very low noise RF nMOSFETs on plastic by substrate thinning and wafer transfer</title><author>Kao, H.L. ; Hung, B.F. ; Chin, A. ; Lai, J.M. ; Lee, C.F. ; McAlister, S.P. ; Chi, C.C.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2618-2c9e3a752c25aec7b1c6b08df04b90d401bd8ce9e287aa3b7e453e7e5b183e353</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2005</creationdate><topic>Applied sciences</topic><topic>Associated gain</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>Frequency measurement</topic><topic>Gain measurement</topic><topic>metal-oxide semiconductor field-effect transistor (MOSFET)</topic><topic>Microwave and submillimeter wave devices, electron transfer devices</topic><topic>minimum noise figure</topic><topic>MOS devices</topic><topic>MOSFETs</topic><topic>Noise figure</topic><topic>Noise measurement</topic><topic>plastic</topic><topic>Plastics</topic><topic>Radio frequency</topic><topic>radio frequency (RF)</topic><topic>Semiconductor device noise</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>Substrates</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Kao, H.L.</creatorcontrib><creatorcontrib>Hung, B.F.</creatorcontrib><creatorcontrib>Chin, A.</creatorcontrib><creatorcontrib>Lai, J.M.</creatorcontrib><creatorcontrib>Lee, C.F.</creatorcontrib><creatorcontrib>McAlister, S.P.</creatorcontrib><creatorcontrib>Chi, C.C.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>Solid State and Superconductivity Abstracts</collection><jtitle>IEEE microwave and wireless components letters</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Kao, H.L.</au><au>Hung, B.F.</au><au>Chin, A.</au><au>Lai, J.M.</au><au>Lee, C.F.</au><au>McAlister, S.P.</au><au>Chi, C.C.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Very low noise RF nMOSFETs on plastic by substrate thinning and wafer transfer</atitle><jtitle>IEEE microwave and wireless components letters</jtitle><stitle>LMWC</stitle><date>2005-11-01</date><risdate>2005</risdate><volume>15</volume><issue>11</issue><spage>757</spage><epage>759</epage><pages>757-759</pages><issn>1531-1309</issn><issn>2771-957X</issn><eissn>1558-1764</eissn><eissn>2771-9588</eissn><coden>IMWCBJ</coden><abstract>A very low minimum noise figure (NF min ) of 1.2 dB and a high associated gain of 12.8 dB at 10 GHz were measured for six-finger, 0.18-μm radio frequency (RF) metal-oxide semiconductor field-effect transistors mounted on insulating plastic following substrate-thinning (/spl sim/30 μm) and wafer transfer. Before this process, the devices had a slightly better RF performance of 1.1-dB NF min and a 13.7-dB associated gain. The small RF performance degradation of the active transistors transferred to plastic shows the potential of integrating electronics onto plastic.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/LMWC.2005.858999</doi><tpages>3</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 1531-1309 |
| ispartof | IEEE microwave and wireless components letters, 2005-11, Vol.15 (11), p.757-759 |
| issn | 1531-1309 2771-957X 1558-1764 2771-9588 |
| language | eng |
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| source | IEEE Xplore (Online service) |
| subjects | Applied sciences Associated gain Electronics Exact sciences and technology Frequency measurement Gain measurement metal-oxide semiconductor field-effect transistor (MOSFET) Microwave and submillimeter wave devices, electron transfer devices minimum noise figure MOS devices MOSFETs Noise figure Noise measurement plastic Plastics Radio frequency radio frequency (RF) Semiconductor device noise Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices Substrates |
| title | Very low noise RF nMOSFETs on plastic by substrate thinning and wafer transfer |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T11%3A58%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_pasca&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Very%20low%20noise%20RF%20nMOSFETs%20on%20plastic%20by%20substrate%20thinning%20and%20wafer%20transfer&rft.jtitle=IEEE%20microwave%20and%20wireless%20components%20letters&rft.au=Kao,%20H.L.&rft.date=2005-11-01&rft.volume=15&rft.issue=11&rft.spage=757&rft.epage=759&rft.pages=757-759&rft.issn=1531-1309&rft.eissn=1558-1764&rft.coden=IMWCBJ&rft_id=info:doi/10.1109/LMWC.2005.858999&rft_dat=%3Cproquest_pasca%3E28122788%3C/proquest_pasca%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c2618-2c9e3a752c25aec7b1c6b08df04b90d401bd8ce9e287aa3b7e453e7e5b183e353%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_pqid=883422565&rft_id=info:pmid/&rft_ieee_id=1525065&rfr_iscdi=true |